MMDF2N02ER2G

FET, MOSFET Arrays Overview

The MMDF2N02ER2G is a dual N-channel enhancement mode MOSFET manufactured by onsemi. It features a SOIC-8 surface-mount package and utilizes silicon technology. The device provides a drain-source breakdown voltage of 20 V and supports a continuous drain current of 3.8 A. Its maximum drain-source on-resistance is specified at 90 mΩ. The gate-source voltage range extends from -12 V to +12 V, with a typical threshold voltage of 1.2 V. Gate charge is rated at 12 nC. Power dissipation capability is 2 W. Operating temperatures range from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual configuration integrating two independent N-channel MOSFETs within a single compact package for space-constrained designs.
• Logic-level compatible gate drive characteristics enabling efficient control with standard low-voltage logic signals.
• Avalanche-rated construction designed to withstand transient energy events during switching operations.

FET, MOSFET Arrays Applications

• Low-side switching in battery-powered portable equipment
• DC motor control circuits requiring dual-channel isolation
• Power management modules in consumer electronics

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix 'ER2G' against official manufacturer documentation to confirm pinout compatibility and tape-and-reel specifications. Ensure that any substitute components maintain identical thermal resistance and package dimensions to preserve existing board layout integrity without redesign.

FET, MOSFET Arrays Selection Notes

Select this component when dual N-channel switching is required in a small form factor. Compare the 90 mΩ on-resistance against load requirements to ensure acceptable conduction losses. Verify that the 20 V rating exceeds the maximum circuit voltage including transients. Confirm that the SOIC-8 package fits the available PCB footprint and thermal constraints.

FET, MOSFET Arrays Part Context

This part belongs to the MMDF series of dual MOSFETs from onsemi. It shares the SOIC-8 CASE 751-07 package with other variants in the family. The series targets applications needing multiple switches in minimal space. Differentiation within the series typically involves variations in on-resistance and current handling capabilities while maintaining the same physical outline.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitutes include the MMDF3N02HDR2G. Verify that the alternative's 90 mΩ on-resistance and 3.8 A current rating match the design requirements. Ensure the replacement maintains the same SOIC-8 pinout and avalanche rating to guarantee functional equivalence.