FET, MOSFET Arrays MMDF2P02ER2 product image

MMDF2P02ER2

$0.54
  • Description:MOSFET 2P-CH 25V 2.5A 8SOIC
  • Series:-

SKU:3a1f0fd3e473 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

MMDF2P02ER2 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2P-CH 25V 2.5A 8SOIC. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MMDF2P02ER2

  • Description:MOSFET 2P-CH 25V 2.5A 8SOIC
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):25V
  • Current - Continuous Drain (Id) @ 25°C:2.5A
  • Rds On (Max) @ Id, Vgs:250mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:475pF @ 16V
  • Power - Max:2W
  • Operating Temperature:-
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for MMDF2P02ER2

MMDF2P02ER2

FET, MOSFET Arrays Overview

The MMDF2P02ER2 is a dual P-Channel enhancement mode MOSFET manufactured by onsemi. It features a SOIC-8 surface mount package and operates with a drain-source breakdown voltage of 25 V. The device supports a continuous drain current of 2.5 A and maintains a maximum on-resistance of 250 mOhms. Gate-source voltage limits are specified at ±20 V, while power dissipation reaches 2 W. Operating temperatures range from -55°C to +150°C junction temperature. Switching characteristics include rise times of 40 ns and 29 ns, and fall times of 41 ns and 28 ns for the two channels.

FET, MOSFET Arrays Feature Summary

  • Dual-channel configuration providing independent control within a compact footprint
  • Enhancement mode operation optimized for logic-level driving compatibility
  • Robust thermal performance supporting high junction temperatures up to 150°C

FET, MOSFET Arrays Applications

  • DC-DC converter circuits requiring synchronous rectification
  • Load switching applications in portable electronic devices
  • Power management modules for battery-operated systems

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distribution channels due to obsolete status. Confirm RoHS compliance requirements as indicated specifications may vary by production batch. Validate package integrity upon receipt to ensure solderability for surface mount assembly processes.

FET, MOSFET Arrays Selection Notes

Evaluate thermal resistance parameters against system heat dissipation capabilities. Compare gate charge values with driver output strength to ensure adequate switching speeds. Verify voltage margins account for transient spikes exceeding the 25 V rating during normal operation cycles.

FET, MOSFET Arrays Part Context

This component belongs to the MMDF2P02E series of dual P-Channel MOSFETs. It shares architectural similarities with other small-signal power transistors designed for efficient space-constrained designs. The series targets applications demanding moderate current handling with low on-state losses.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in verified documentation. Engineering teams should consult manufacturer cross-reference guides or evaluate equivalent SOIC-8 dual P-Channel MOSFETs meeting identical electrical specifications.

MMDF2P02ER2MMDF2P02ER2
$0.54
Buy Now