MMDF2P02ER2G

FET, MOSFET Arrays Overview

The MMDF2P02ER2G is a dual P-Channel enhancement mode MOSFET manufactured by onsemi. It features a SOIC-8 surface-mount package and operates with a drain-source breakdown voltage of 25 V and a continuous drain current of 2.5 A. The device exhibits a maximum on-resistance of 250 mΩ at specified gate-source voltages ranging from -4.5 V to -10 V. Electrical characteristics include rise times of 40 ns and 29 ns, fall times of 41 ns and 28 ns, and turn-off delays of 53 ns and 30 ns for the two channels. Power dissipation is rated at 2 W, with an operating temperature range spanning from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual-channel configuration providing independent control within a compact footprint
• Logic-level compatible gate drive requirements for efficient switching applications
• Enhancement mode operation ensuring reliable off-state blocking capabilities

FET, MOSFET Arrays Applications

• Low-side switching in battery-powered portable devices
• Power management circuits requiring dual channel isolation
• General purpose load switching in consumer electronics

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status as indicated in official documentation. Ensure storage conditions maintain moisture sensitivity level integrity prior to soldering. Validate lot traceability against manufacturer records to guarantee performance consistency.

FET, MOSFET Arrays Selection Notes

Evaluate thermal resistance parameters against system heat dissipation requirements. Compare on-resistance values with alternative components to optimize conduction losses. Verify gate threshold voltage compatibility with available logic levels. Assess package thermal performance for adequate heat transfer in enclosed designs.

FET, MOSFET Arrays Part Context

This component belongs to the MMDF2P02E series of dual P-Channel MOSFETs. The series offers integrated solutions for space-constrained designs requiring multiple switching elements. Manufacturing processes utilize silicon technology optimized for low on-resistance and fast switching speeds.

FET, MOSFET Arrays Replacement Considerations

Cross-reference with MMDF2P02ER2 for identical specifications. Check MMDF3N02HDR2G for N-Channel alternatives if polarity inversion is acceptable. Verify pinout compatibility before substituting with other SOIC-8 packaged MOSFETs.