FET, MOSFET Arrays MMDF2P02HDR2 product image

MMDF2P02HDR2

  • Description:MOSFET 2P-CH 20V 3.3A 8SOIC
  • Series:-

SKU:5299b21de560 Category: Brand:

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MMDF2P02HDR2 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2P-CH 20V 3.3A 8SOIC. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MMDF2P02HDR2

  • Description:MOSFET 2P-CH 20V 3.3A 8SOIC
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:3.3A
  • Rds On (Max) @ Id, Vgs:160mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id:2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:588pF @ 16V
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for MMDF2P02HDR2

MMDF2P02HDR2

FET, MOSFET Arrays Overview

The MMDF2P02HDR2 is a dual P-Channel enhancement mode MOSFET manufactured by onsemi. It is housed in an SOIC-8 surface-mount package designed for efficient power switching applications. The device features a drain-source breakdown voltage of 25 V and supports a continuous drain current of 2 A. Key electrical characteristics include a maximum on-resistance of 250 mΩ at specified gate drive conditions. The component operates within a temperature range from -55°C to +150°C junction temperature, with a total power dissipation capability of 2 W. Switching performance includes rise and fall times typically around 40 ns and 28 ns respectively, ensuring suitability for high-speed digital control interfaces.

FET, MOSFET Arrays Feature Summary

  • Dual independent P-Channel configuration for bridge or half-bridge topologies
  • Logic-level compatible gate threshold for direct microcontroller interfacing
  • Enhanced thermal stability with extended operating temperature range up to 150°C
  • Low on-resistance design minimizes conduction losses in power paths

FET, MOSFET Arrays Applications

  • DC-DC converter synchronous rectification stages
  • Motor driver low-side or high-side switching elements
  • Power management unit load switches
  • Battery protection circuitry overcurrent detection

FET, MOSFET Arrays Procurement Notes

Verify the exact ordering suffix against the manufacturer's latest datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors, as availability may vary by region. Ensure the procurement channel provides genuine components with traceable lot codes to prevent counterfeit risks in critical power applications.

FET, MOSFET Arrays Selection Notes

Select this component when a dual P-channel solution is required in a compact SOIC-8 footprint. Evaluate the 250 mΩ on-resistance against thermal constraints for the specific load current. Compare switching speeds and gate charge requirements with alternative logic-level MOSFETs to ensure compatibility with the driving controller's output capabilities and voltage levels.

FET, MOSFET Arrays Part Context

This part belongs to the MMDF2P02E series of dual MOSFETs from onsemi. It serves as a complementary counterpart to N-channel variants in the same family, enabling balanced half-bridge designs. The series is engineered for cost-effective power management in consumer electronics and industrial control systems requiring reliable switching performance in small outline packages.

FET, MOSFET Arrays Replacement Considerations

Check for pin-compatible alternatives such as the MMDF2N02HDR2 for N-channel needs or other SOIC-8 dual MOSFETs from onsemi. Verify that substitute parts meet or exceed the 25 V rating and 2 A current capacity. Ensure thermal resistance and gate threshold voltages are compatible with the existing circuit design before substitution.

MMDF2P02HDR2MMDF2P02HDR2

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