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Product Detailed Parameters
- Description：TRANS 2NPN 40V 600MA SOT-563
- Series：-
- Mfr：Panjit International Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 NPN (Dual)
- Current - Collector (Ic) (Max)：600mA
- Voltage - Collector Emitter Breakdown (Max)：40V
- Vce Saturation (Max) @ Ib, Ic：1V @ 50mA, 500mA
- Current - Collector Cutoff (Max)：10nA
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 150mA, 10V
- Power - Max：200mW
- Frequency - Transition：300MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
Download product information
Overview
The MMDT2222ATB6 is a dual surface mount NPN transistor containing two electrically isolated transistors in an SOT-563 package. It features a collector-emitter voltage of 40V, collector current of 600mA, and total power dissipation of 200mW at 25°C. The device has a junction-to-ambient thermal resistance of 625°C/W and operates within a temperature range of -55°C to +150°C. Electrical characteristics include a DC current gain (hFE) ranging from 35 to 300, a gain-bandwidth product of 300MHz, and specific saturation voltages for switching applications.
Feature Summary
- Electrically isolated dual NPN switching transistors
- Ultra-small SOT-563 package for board space optimization
- Well-matched hFE between the two transistors
Applications
- General purpose amplifier applications
- Hand-held computers
- PDAs
Procurement Notes
Verify the ordering suffix to confirm packaging specifications. The R1 suffix indicates tape and reel packing on a 7-inch reel with 4,000 units per reel. Confirm RoHS compliance and halogen-free status through the version code provided in the complete part number.
Selection Notes
Select this component when electrical isolation between two NPN channels is required in a compact footprint. Ensure the design accommodates the 200mW total power dissipation limit and the 625°C/W thermal resistance by adhering to recommended pad layouts on FR-4 boards.
Part Context
This device contains two electrically-isolated 2N2222A NPN transistors encapsulated in an ultra-small SOT-563 package. It is designed for portable applications where board space is at a premium, offering well-matched hFE characteristics for both internal transistors.
Replacement Considerations
MMDT2222ATB6_R2_00001
FAQ
What is the maximum collector-emitter voltage?
The maximum collector-emitter voltage (VCEO) is 40V.
Is the device lead-free?
Yes, the device is lead-free and complies with EU RoHS 2.0 directives.
What is the marking code on the device?
The device marking code is TU.
