MMDT2227-7

Overview

The MMDT2227-7 is a complementary dual bipolar junction transistor (BJT) array manufactured by Diodes Incorporated. It integrates one NPN and one PNP transistor within a single SOT-363 surface-mount package. The device supports a maximum DC collector current of 600 mA. Voltage ratings include a collector-emitter breakdown voltage (VCEO) of 40 V for the NPN and 60 V for the PNP, with collector-base voltages (VCBO) of 60 V and 75 V respectively. The emitter-base voltage (VEBO) is rated at 6 V. Power dissipation is limited to 200 mW. Transition frequencies are specified at 300 MHz for the NPN and 200 MHz for the PNP. The minimum DC current gain (hFE) is 100 at 150 mA and 10 V.

Feature Summary

• Complementary NPN/PNP configuration in a compact SOT-363 package
• High transition frequency suitable for RF and switching applications
• Low saturation voltage characteristics

Applications

• General-purpose switching circuits
• Small-signal amplification stages
• Driver circuits for low-power loads

Procurement Notes

Verify the specific suffix against official Diodes Incorporated documentation to confirm tape-and-reel packaging quantities and RoHS compliance status. Ensure the ordering part number matches the required voltage and current specifications for the target application design.

Selection Notes

Select this component when a matched complementary pair is required in a minimal footprint. Compare the 200 mW power dissipation limit against thermal requirements. Verify that the 40 V/60 V voltage ratings exceed the circuit's peak operating voltages.

Part Context

This part belongs to the MMDT22 series of small-signal transistors. It serves as a surface-mount alternative to through-hole complementary pairs, facilitating automated assembly and reduced board space consumption in consumer electronics and industrial control modules.

Replacement Considerations

MMDT2227Q-7-F: Complementary NPN/PNP 40V/60V SOT-363.