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Product Detailed Parameters
- Description：TRANS 2NPN 40V 600MA SOT-363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 NPN (Dual)
- Current - Collector (Ic) (Max)：600mA
- Voltage - Collector Emitter Breakdown (Max)：40V
- Vce Saturation (Max) @ Ib, Ic：750mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 150mA, 1V
- Power - Max：200mW
- Frequency - Transition：250MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The MMDT4401-7-F is a dual NPN small signal transistor manufactured by Diodes Incorporated, housed in an SOT363 surface-mount package. It features a maximum collector current of 600 mA and a collector-emitter voltage rating of 40 V. The device provides a power dissipation capacity of 200 mW at +25°C ambient temperature. Electrical characteristics include a DC current gain (hFE) ranging from 20 to 300 depending on the operating current, and a transition frequency (fT) of 250 MHz. The component operates within a temperature range of -55°C to +150°C.
Feature Summary
- Dual NPN configuration integrated into an ultra-small SOT363 surface-mount package for space-constrained designs.
- Epitaxial planar die construction optimized for low-power amplification and switching applications.
- Compliant with RoHS directives and manufactured as a halogen-free and antimony-free green device.
Applications
- Low-power amplification circuits
- General-purpose switching applications
Procurement Notes
Verify that the ordering suffix matches the required reel size and tape width specifications. Confirm compliance requirements such as lead-free status and halogen-free classification against project standards. Ensure the selected variant aligns with the specific packaging quantity needed for production assembly processes.
Selection Notes
Select this component when a compact dual NPN solution is required for low-power tasks. Evaluate the thermal resistance and derating curves if operation exceeds standard ambient temperatures. Compare the 200 mW power dissipation limit against the circuit's actual load to ensure safe operating conditions are maintained.
Part Context
This part belongs to the MMDT4401 series of dual transistors. It serves as a complementary or paired alternative to single-transistor configurations like the MMBT4401. The automotive-compliant version is designated as MMDT4401Q, which follows separate qualification standards.
Replacement Considerations
MMDT4401Q is the automotive-grade equivalent. Single-transistor alternatives include MMBT4401-7-F-W and MMBT4401T-7-F, though these require two units to match the dual functionality.
FAQ
What is the marking code for the MMDT4401-7-F?
The product type marking code is K2X.
What is the ESD rating for human body model testing?
The device has an ESD rating of 4,000 V under JEDEC Class 3A for the Human Body Model.
How does the DC current gain vary with collector current?
The hFE ranges from 20 to 300 at IC = 100µA, up to 80 to 300 at IC = 1.0mA, and decreases to 40 minimum at IC = 500mA.
