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MMFT8472DW is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Diotec Semiconductor. Its product description is MOSFET 0.115A SOT363. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for MMFT8472DW
- Description：MOSFET 0.115A SOT363
- Series：-
- Mfr：Diotec Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：115mA
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：-
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for MMFT8472DW
FET, MOSFET Arrays Overview
The MMFT8472DW is a dual N+P channel enhancement mode FET in an SOT-363 package. It integrates two complementary transistors for signal processing and logic level conversion. The N-channel device features a drain-source voltage of 60 V, on-state resistance under 7.5 Ω, and peak current of 800 mA. The P-channel counterpart offers -50 V breakdown, resistance below 10 Ω, and -520 mA peak current. Total power dissipation reaches 200 mW at 25°C ambient temperature with a maximum junction temperature of 150°C.
FET, MOSFET Arrays Feature Summary
- Dual FET configuration integrating two complementary transistors within a single compact package
- Fast switching times suitable for high-speed signal processing applications
- Compliant to RoHS standards without exemptions and adheres to REACH regulations
FET, MOSFET Arrays Applications
- Signal processing circuits
- Logic level converters
- Driver stages
FET, MOSFET Arrays Procurement Notes
Verify the specific ordering suffix when purchasing. The standard version is commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliance, while -AQ denotes AEC-Q101 qualification. Confirm these designations match project requirements before procurement.
FET, MOSFET Arrays Selection Notes
Select this component for designs requiring complementary N and P channel MOSFETs in a minimal footprint. Ensure the 60V and -50V voltage ratings accommodate system peaks. Verify that the 200mW power dissipation limit aligns with thermal management capabilities on the PCB layout.
FET, MOSFET Arrays Part Context
This part belongs to Diotec Semiconductor's discrete transistor portfolio, specifically designed as a dual FET solution. It serves as a space-saving alternative to using separate N and P channel devices, facilitating simplified board layouts for low-power switching and logic interfacing tasks.
FET, MOSFET Arrays Replacement Considerations
No official substitutes are listed. When evaluating alternatives, ensure the replacement matches the SOT-363 package dimensions and provides comparable N/P channel voltage ratings and on-resistance values.
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