MMFTC6333

FET, MOSFET Arrays Overview

The MMFTC6333 is a dual N+P channel power MOSFET manufactured by Diotec Semiconductor in an SOT-26 (SOT-457) package. It integrates complementary transistors optimized for low on-state resistance and fast switching. Key electrical parameters include a drain-source voltage of 30 V for Q1 and -30 V for Q2, with continuous drain currents of 2.5 A and -2.0 A respectively. The typical on-state resistance is less than 95 mΩ for the N-channel and 130 mΩ for the P-channel at specified gate voltages. Total power dissipation reaches 0.96 W when mounted on a PCB with a 625 mm² copper pad. Operating temperatures range from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Integrates two complementary MOSFETs in a compact, space-saving SOT-26 package with low profile height.
• Features low on-state resistance and low gate charge to minimize power loss and enhance switching speed.
• Compliant with RoHS directives without exemptions, REACH regulations, and conflict minerals requirements.

FET, MOSFET Arrays Applications

• Power management units
• Battery powered devices
• Load switches and polarity protection circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix when purchasing. The standard version is commercial/industrial grade. Suffixes -Q indicate AEC-Q101 compliance, while -AQ denotes parts undergoing AEC-Q101 qualification. Confirm these designations match project reliability requirements before procurement.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring a small footprint for dual-channel switching. Ensure thermal management accommodates the junction-to-ambient thermal resistance of 130 K/W. Verify that the required current does not exceed the 2.5 A or -2.0 A continuous limits under the expected operating temperature conditions.

FET, MOSFET Arrays Part Context

This device belongs to Diotec's portfolio of surface-mount power MOSFETs designed for high-density circuit board layouts. It serves as a compact alternative to larger packages like SO-8 or TSSOP-8 where space constraints are critical. The integrated complementary pair simplifies driver circuit designs for load switching and inversion tasks.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. When evaluating alternatives, verify matching pin configurations, voltage ratings, and thermal characteristics to ensure functional compatibility without modifying the existing PCB layout.

FET, MOSFET Arrays FAQ

What is the maximum gate-source voltage rating?

The maximum continuous gate-source voltage is ±16 V for the N-channel (Q1) and ±20 V for the P-channel (Q2).

How is the power dissipation rating determined?

The total power dissipation of 0.96 W is valid when the device is mounted on a printed circuit board with a 625 mm² copper pad.

Does the MMFTC6333 support automotive applications?

Standard versions are for commercial/industrial use. Versions with the suffix -Q are AEC-Q101 compliant, and those with -AQ are in AEC-Q101 qualification.