MMFTN620KDW

$0.22

Description：MOSFET SOT363 N+N 60V 0.35A 2OHM
Series：-

SKU:6e0c722eeb40 Category: FET, MOSFET Arrays Brand: Diotec Semiconductor

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Product introduction

MMFTN620KDW is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Diotec Semiconductor. Its product description is MOSFET SOT363 N+N 60V 0.35A 2OHM. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MMFTN620KDW

Description：MOSFET SOT363 N+N 60V 0.35A 2OHM
Series：-
Mfr：Diotec Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：-
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：350mA
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-
Mounting Type：Surface Mount
Package / Case：-
Supplier Device Package：SOT-363
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MMFTN620KDW

MMFTN620KDW

FET, MOSFET Arrays Overview

The MMFTN620KDW is a dual N-channel enhancement mode MOSFET in an SOT-363 package. It features a drain-source voltage of 60 V and a continuous drain current of 350 mA. The on-state resistance is less than 2 Ω at VGS = 2.5 V. Power dissipation reaches 410 mW with adequate copper pads. Gate-source voltage withstands ±20 V DC or ±2 kV ESD. Operating temperature spans -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

Dual transistor configuration within a compact surface-mount package
ESD protected gate structure for enhanced signal integrity
Low threshold voltage enabling efficient drive from low logic levels
Fast switching times suitable for high-frequency power management

FET, MOSFET Arrays Applications

Power Management Systems
Motor Control Circuits
Driver Stages

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix when ordering, as it determines automotive qualification status. Confirm RoHS compliance and REACH registration requirements against project specifications. Ensure the selected packaging matches the intended assembly line equipment capabilities. Validate thermal performance parameters based on actual PCB copper pad dimensions used in the design.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring dual N-channel isolation in minimal space. Evaluate the low threshold voltage against the driving circuit's output levels. Consider the thermal resistance values relative to the available copper area on the printed circuit board. Verify that the peak drain current meets transient load requirements during operation.

FET, MOSFET Arrays Part Context

This device belongs to Diotec Semiconductor's MMFTN series of small-signal MOSFETs. It utilizes silicon technology optimized for commercial and industrial grade reliability. The SOT-363 footprint allows for dense board layouts compared to single-transistor alternatives.

FET, MOSFET Arrays Replacement Considerations

No official substitutes are listed by the manufacturer. When evaluating alternatives, ensure the replacement supports dual configurations in SOT-363 packages. Verify matching electrical characteristics, specifically the 60 V breakdown voltage and low on-resistance thresholds.