RF Diode MMP7066-11 product image

MMP7066-11

  • Description:RF DIODE PIN 500V DIE
  • Series:-

SKU:f0ffdf247af2 Category: Brand:

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MMP7066-11 is listed in the RF Diode range at ChipApex. The manufacturer field lists MACOM Technology Solutions. Its product description is RF DIODE PIN 500V DIE. Review the specifications below when checking this part for your BOM.

RF Diode specifications for MMP7066-11

  • Description:RF DIODE PIN 500V DIE
  • Series:-
  • Mfr:MACOM Technology Solutions
  • Package:Tray
  • Diode Type:PIN - Single
  • Voltage - Peak Reverse (Max):500V
  • Current - Max:150 mA
  • Capacitance @ Vr, F:0.1pF @ 100V, 1MHz
  • Resistance @ If, F:15Ohm @ 1mA, 100MHz
  • Power Dissipation (Max):-
  • Operating Temperature:175°C (TJ)
  • Package / Case:Die
  • Supplier Device Package:Die
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for MMP7066-11

MMP7066-11

RF Diode Overview

The MMP7066-11 is an unpackaged silicon PIN diode die designed for attenuator, switch, and high-power limiter applications. It features a reverse voltage rating of 500 V at 10 µA leakage current and a forward voltage of 1.1 V at 100 mA. Series resistance values are specified as 23.0 Ω at 1 mA, 5.0 Ω at 10 mA, and 1.2 Ω at 100 mA, all measured at 100 MHz. The junction capacitance is 0.1 pF at 100 V reverse bias and 1 MHz. Key physical parameters include a minority carrier lifetime of 850 ns and an I-layer thickness of 70 µm.

RF Diode Feature Summary

  • Low series resistance and low junction capacitance to produce excellent isolation and insertion loss
  • Very low thermal resistance typically less than 20°C/W enabling reliable handling of large RF power levels
  • Manufactured using a proven process ensuring high reliability and uniformity

RF Diode Applications

  • Attenuator circuits
  • Switching applications
  • High-power limiter applications
  • ISM band operations

RF Diode Procurement Notes

Verify the specific package configuration and ordering suffix when sourcing the MMP7066-11. Confirm that the component meets RoHS compliance requirements for hazardous substances. Ensure proper ESD control techniques are utilized during handling, as these are Class 1A devices sensitive to electrostatic discharge. Validate environmental capabilities against MIL-STD-750 standards if required for the application.

RF Diode Selection Notes

Select this component based on its 70 µm I-layer thickness and 850 ns minority carrier lifetime for high-power handling. Consider the thermal resistance characteristics for heat dissipation in dense layouts. Evaluate the series resistance and capacitance specifications to ensure they meet the isolation and insertion loss requirements of the target RF circuit design.

RF Diode Part Context

This device belongs to MACOM's silicon PIN diode portfolio, utilizing a heterolithic microwave integrated circuit (HMIC) process. It is part of a broader range of switches and diodes covering frequencies from DC to 70 GHz. The product line includes various packaging options and materials tailored for commercial, aerospace, and defense markets.

RF Diode Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult MACOM technical support for potential alternatives or cross-references within their silicon PIN diode lineup.

MMP7066-11MMP7066-11

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