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Product Detailed Parameters
- Description：RF MOSFET LDMOS 28V TO270-2
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：LDMOS
- Frequency：2.17GHz
- Gain：15.5dB
- Voltage - Test：28 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：130 mA
- Power - Output：10W
- Voltage - Rated：68 V
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-270AA
- Supplier Device Package：TO-270-2
- Configuration：-
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Overview
The MMRF1004NR1 is an N-channel silicon RF power MOSFET transistor manufactured by NXP Semiconductors. Designed for general-purpose applications in Class A or Class AB modes, it operates within the 1600 to 2200 MHz frequency range. The device delivers a typical output power of 10 W PEP at 28 Vdc drain voltage with a quiescent current of 130 mA. It features internal matching for ease of use and is qualified for operation up to 32 Vdc. The component includes integrated ESD protection and is RoHS compliant.
Feature Summary
- Capable of handling 5:1 VSWR under specified operating conditions
- Internally matched for simplified circuit integration
- Integrated electrostatic discharge (ESD) protection
- Qualified for maximum 32 Vdd operation
Applications
- Analog modulation amplifier applications
- Digital modulation amplifier applications
- Multipurpose amplifier applications
Procurement Notes
Verify the specific suffix R1 indicates the reel packaging configuration containing 500 units on a 24 mm tape width with a 13-inch reel diameter. Confirm moisture sensitivity classification and REACH-SVHC compliance status through official datasheets before procurement. Ensure compatibility with series equivalent large-signal impedance parameters during design validation.
Selection Notes
Select this component for linear RF amplification tasks requiring robust performance across wideband frequencies from 1600 to 2200 MHz. The internal matching network reduces external component count, while the high VSWR tolerance ensures reliability in mismatched load environments. Verify thermal management requirements align with the plastic package capabilities for sustained operation.
Part Context
This part belongs to the MMRF1004N family of RF power field effect transistors. It shares core electrical characteristics with the MMRF1004N but differs in packaging format. The NR1 designation specifically denotes the reel-based supply method, distinguishing it from cut-tape or other packaging variants within the same product line.
Replacement Considerations
The MMRF1004GNR1 is a documented substitute within the same functional family. Both parts share identical electrical specifications and application profiles. Verify pinout and thermal pad configurations match the target PCB layout when substituting.
