MMRF1005HR5

Overview

The MMRF1005HR5 is a lateral N-channel RF power MOSFET manufactured by NXP Semiconductors. It operates at 1300 MHz and delivers 250 W of output power with a 50 V supply voltage. The device utilizes silicon technology and is supplied in reel packaging. This component is classified as an RF power MOSFET transistor within the NXP product portfolio.

Feature Summary

• Lateral N-channel RF power MOSFET construction
• Designed for broadband RF applications
• Silicon-based semiconductor technology

Applications

• Broadband RF power amplification
• High-frequency signal processing

Procurement Notes

Verify current manufacturing status, as availability may be limited or discontinued. Confirm exact package specifications and datasheet revisions before integration. Ensure compliance with RoHS and REACH regulations relevant to your region. Cross-reference ordering suffixes to match required packaging formats. Validate electrical parameters against specific application requirements using official documentation.

Selection Notes

Select this component for applications requiring high power output at 1300 MHz. Consider the 50 V operating voltage and lateral N-channel architecture for circuit design compatibility. Evaluate thermal management needs for 250 W dissipation. Compare performance metrics with alternative RF MOSFETs if broader bandwidth or different voltage ratings are required.

Part Context

This part belongs to NXP's family of lateral N-channel RF power MOSFETs. These devices are engineered for robust performance in demanding radio frequency environments. The MMRF series typically targets broadband amplifier designs where high linearity and power efficiency are critical. Silicon technology provides reliable operation across specified frequency ranges.