MMRF1006HR5

Overview

The MMRF1006HR5 is a pulse lateral N-channel RF power MOSFET manufactured by Freescale Semiconductor. It utilizes Silicon (Si) technology and is housed in an HR5 package. The device is rated for operation at 1400 MHz with a maximum drain voltage of 50 V. It delivers a typical output power of 330 W, making it suitable for high-power radio frequency applications.

Feature Summary

• High power density design optimized for pulsed RF operations
• Robust silicon LDMOS construction for thermal stability
• Engineered for efficient amplification in broadband environments

Applications

• Pulsed radar systems
• Electronic warfare equipment
• Broadband communication transmitters

Procurement Notes

Verify the specific manufacturer documentation to confirm current production status, as availability may vary. Ensure that the ordering suffix matches the required packaging configuration. Cross-reference the datasheet electrical characteristics against system requirements before integration. Confirm compliance with relevant environmental standards such as RoHS directives applicable to your region.

Selection Notes

Select this component when designing circuits requiring high output power at 1400 MHz under pulsed conditions. Evaluate the thermal management capabilities of the PCB layout to handle the heat dissipation associated with 330 W output. Compare the gain and efficiency parameters against alternative devices to ensure optimal system performance within the specified 50 V supply constraints.

Part Context

This part belongs to the MMRF series of RF power MOSFETs from Freescale Semiconductor, now part of NXP Semiconductors. The series is characterized by its use in demanding RF applications where high linearity and power handling are critical. The HR5 package provides a standardized form factor for mounting on printed circuit boards designed for high-frequency signal integrity.