SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The MMRF1008GHR5 is a pulse lateral N-channel RF power MOSFET manufactured by NXP Semiconductors. It operates within the frequency range of 960 MHz to 1215 MHz. The device delivers an output power of 275 W with a drain voltage of 50 V. Constructed using silicon technology, it belongs to the RF MOSFET transistor category. The component is currently discontinued and no longer in active manufacturing.
This component is officially listed as End of Life (EOL) by NXP Semiconductors. Availability is restricted to existing stock or surplus markets. Verify authenticity through authorized distributors. Check RoHS compliance certificates if required for specific regulatory environments. No new production units are available from the manufacturer.
Select this part only for legacy system maintenance or replacement where exact specifications are mandatory. Consider the discontinuation status when planning long-term supply chains. Evaluate alternative components from the same family if future availability is a constraint. Ensure thermal management solutions match the original design requirements for this power level.
The MMRF1008GHR5 is part of NXP's broader portfolio of RF power devices intended for demanding communication and defense applications. It sits within the MMRF series, which focuses on robust silicon-based RF performance. This specific model targets mid-power broadband needs, bridging lower power discrete devices and higher power modules.
No verified public substitute part numbers are documented for this specific discontinued model. Engineers should consult NXP technical support for potential pin-compatible alternatives or updated series replacements that meet the 275 W and 960-1215 MHz specifications.