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The MMRF1008HR5 is a pulse lateral N-channel RF power MOSFET manufactured by NXP Semiconductors. It operates within the 960-1215 MHz frequency range and delivers 275 W of output power with a 50 V drain voltage. The device utilizes silicon technology and is supplied in a reel package configuration. This component is classified as an RF MOSFET transistor designed for high-power radio frequency applications.
Verify current availability status as the product lifecycle indicates end-of-life or discontinuation. Confirm RoHS compliance details through official documentation. Check for specific environmental declarations and material safety data sheets required for integration. Ensure ordering suffixes match exact package requirements. Validate technical specifications against latest datasheet revisions before procurement.
Select this component for applications requiring 275 W pulse power in the 960-1215 MHz band. Ensure system design supports 50 V operation. Consider thermal management for lateral N-channel structures. Verify compatibility with existing RF circuit topologies. Evaluate duty cycle constraints against the specified pulse operation limits.
This part belongs to the MMRF series of RF power MOSFETs from NXP Semiconductors. It shares architectural similarities with other lateral N-channel devices in the portfolio, such as the MMRF1009H, though power ratings and frequency ranges differ. The HR5 suffix typically denotes reel packaging for automated assembly processes.
Public confirmed substitute part numbers are not available in the provided source material. Consult NXP Semiconductors for updated replacement recommendations due to the discontinued status.