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The MMRF1008HSR5 is a pulse lateral N-channel RF power MOSFET manufactured by NXP Semiconductors. It operates within the 960-1215 MHz frequency range and delivers 275 W of output power at 50 V. The device utilizes silicon technology and is housed in an NI-780S package. This component is designed for high-power radio frequency applications, offering robust performance in demanding environments.
Verify availability status carefully as this component may be obsolete or discontinued. Confirm exact package type NI-780S compatibility with existing PCB footprints. Check RoHS compliance details against current regulatory requirements. Ensure supplier documentation matches the specific suffix HSR5 for correct reel/cut tape specifications. Validate authenticity through authorized channels due to potential obsolescence.
Select this part for applications requiring 275 W output in the 960-1215 MHz range. Consider thermal management needs for the NI-780S package. Evaluate if pulse operation aligns with system duty cycle requirements. Compare against active alternatives like MRF6V12250HSR5 if long-term supply is critical. Ensure 50 V system design supports the device voltage rating.
This component belongs to NXP's RF MOSFET transistor family, specifically designed for high-power radio frequency applications. It complements other broadband RF power transistors in the portfolio. The NI-780S package provides a standardized form factor for integration into industrial and medical RF systems. It represents a specialized solution for ISM band power amplification tasks.
The MRF6V12250HSR5 is identified as an active substitute for the obsolete MMRF1008HSR5. Verify pinout and electrical parameter compatibility before substitution. Consult official NXP documentation for detailed replacement guidelines and application note references.