MMRF1009HSR5

Overview

The MMRF1009HSR5 is a pulse lateral N-channel RF power MOSFET manufactured by NXP Semiconductors. It operates within the frequency range of 960 MHz to 1215 MHz and delivers an output power of 500 W at a drain voltage of 50 V. The device utilizes silicon technology and is supplied in a reel package format.

Feature Summary

• Pulse lateral N-channel architecture optimized for high-power RF applications
• Silicon-based construction ensuring robust performance in demanding environments

Applications

• High-power radio frequency amplification
• Broadband transmitter systems
• Military communication equipment

Procurement Notes

Verify the specific datasheet version and manufacturing status before procurement, as this component may be subject to end-of-life notices or discontinuation. Confirm that the reel packaging aligns with your automated assembly requirements. Ensure compliance with RoHS directives and check for any REACH SVHC declarations relevant to your region's regulatory standards prior to finalizing orders.

Selection Notes

Select this component when designing systems requiring 500 W output power within the 960-1215 MHz band. It is suitable for applications needing high efficiency and linearity under pulsed conditions. Consider the 50 V operating voltage and NI-1230S-4 package compatibility during thermal management and PCB layout planning.

Part Context

This part belongs to NXP’s MMRF series of RF power MOSFETs, designed for high-performance broadband applications. It represents a silicon-based solution for mid-to-high power RF amplification, distinct from lower-power LDMOS variants or higher-frequency GaN devices.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official NXP resources for potential obsolescence management or alternative recommendations.