MMRF1014NT1

Overview

The MMRF1014NT1 is an N-channel enhancement-mode LDMOS transistor designed for Class A or AB power amplifier applications up to 2000 MHz. It supports analog and digital modulation with a drain-source voltage of 68 Vdc and operates at junction temperatures up to 150°C. At 1960 MHz, it delivers 4 W PEP output with 18 dB gain and 33% efficiency. At 900 MHz, it provides 19 dB gain and 33% efficiency under similar conditions. The device handles 5:1 VSWR at 28 Vdc and includes integrated ESD protection.

Feature Summary

• On-chip RF feedback ensures broadband stability across the operating frequency range.
• Integrated electrostatic discharge (ESD) protection enhances device reliability.
• Characterized using series equivalent large-signal impedance parameters for design flexibility.

Applications

• Analog and digital modulation amplifiers
• Multicarrier amplifier applications
• General purpose RF power amplification

Procurement Notes

Verify the T1 suffix indicates tape and reel packaging containing 1,000 units on a 16 mm wide, 7-inch reel. Confirm the PLD-15 plastic package type matches your thermal and mechanical requirements. Ensure compatibility with the specified moisture sensitivity level rating during assembly processes.

Selection Notes

Select this component for designs requiring stable performance up to 2000 MHz in Class A or AB configurations. Consider the 68 Vdc drain-source voltage rating for supply headroom. Evaluate the thermal resistance values against your heat sinking strategy to maintain the junction temperature within the 150°C limit.

Part Context

This part belongs to the RF Power LDMOS Transistor family from NXP USA Inc., originally documented by Freescale Semiconductor. It serves as a discrete solution for radio frequency power amplification, distinct from integrated RFICs or other semiconductor categories like logic or microcontrollers.

Replacement Considerations

Consult official documentation for direct substitutes. Verify pinout compatibility and electrical ratings before considering alternative models.

FAQ

What is the maximum drain-source voltage?

The maximum drain-source voltage (VDSS) is rated at -0.5 to +68 Vdc.

How does the device handle load mismatches?

It is capable of handling a 5:1 Voltage Standing Wave Ratio (VSWR) at 28 Vdc and 1960 MHz with 4 W CW output power.

What packaging format is used for the NT1 suffix?

The T1 suffix denotes a tape and reel configuration containing 1,000 units on a 16 mm tape width and 7-inch reel.