MMRF1015GNR1

MMRF1015GNR1

  • Description:RF MOSFET LDMOS 28V TO270-2
  • Series:-

SKU:513f0319deb5 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V TO270-2
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:960MHz
  • Gain:18dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:125 mA
  • Power - Output:10W
  • Voltage - Rated:68 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-270BA
  • Supplier Device Package:TO-270-2 GULL
  • Configuration:-

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MMRF1015GNR1

Overview

The MMRF1015GNR1 is an RF power transistor manufactured by NXP USA Inc. It is classified as a discrete semiconductor device within the transistor category. The component is designed for general-purpose applications and operates with an NPN polarity/channel type. Key electrical parameters include a maximum collector current (IC) of 1 A, a minimum DC current gain (hFE) of 10, and a maximum power dissipation (Abs) of 17.5 W. The device supports a highest operating temperature of 150 °C. It is configured as a single element and does not utilize surface mount packaging.

Feature Summary

  • Designed for general-purpose RF applications
  • Capable of handling high power dissipation up to 17.5 W
  • Features integrated stability enhancements

Applications

  • General purpose amplifier circuits
  • Industrial equipment
  • Communication systems

Procurement Notes

Verify the specific datasheet revision and package details before procurement. Confirm that the non-surface mount form factor aligns with your PCB design requirements. Ensure thermal management solutions are adequate for the 17.5 W dissipation rating at the intended operating temperature. Check for any specific handling instructions related to the plastic package construction.

Selection Notes

Select this component when a robust NPN transistor with moderate current capabilities is required. The 1 A collector current and 17.5 W power dissipation make it suitable for applications needing reliable performance without excessive size. Consider the non-surface mount constraint during mechanical design. Verify compatibility with the target frequency range and biasing conditions specified in the official documentation.

Part Context

This part belongs to the broader family of RF power transistors offered by NXP. It shares design philosophies with other devices in the portfolio, focusing on ruggedness and ease of use. The MMRF1015GNR1 specifically targets applications requiring stable operation under varying load conditions. Its classification as a discrete semiconductor highlights its role as a fundamental building block in larger electronic systems.

Replacement Considerations

Consult official substitution guides for verified alternatives. Ensure any replacement matches the NPN configuration, 1 A current rating, and 17.5 W power dissipation. Verify pinout compatibility and package dimensions to avoid mechanical integration issues. Cross-reference electrical characteristics to maintain system performance integrity.

MMRF1015GNR1MMRF1015GNR1

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