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Product Detailed Parameters
- Description：RF MOSFET LDMOS 50V PLD-1.5
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：LDMOS
- Frequency：1.09GHz
- Gain：25dB
- Voltage - Test：50 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：10 mA
- Power - Output：10W
- Voltage - Rated：100 V
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：PLD-1.5
- Supplier Device Package：PLD-1.5
- Configuration：-
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Overview
The MMRF1019NR4 is an RF LDMOS transistor manufactured by NXP USA Inc., designed for high-power radio frequency applications. It operates at a frequency of 1.09 GHz with a gain of 25 dB and delivers an output power of 10 W. The device features a voltage rating of 100 V and a test voltage of 50 V, with a current consumption of 10 mA. Packaged in the PLD-1.5 surface-mount format, this component provides robust performance for demanding RF environments.
Feature Summary
- Utilizes LDMOS technology for enhanced reliability and thermal stability in RF circuits
- Optimized for high gain and output power efficiency at 1.09 GHz
- Designed with a compact PLD-1.5 package for efficient surface-mount integration
Applications
- Base station power amplification
- Wireless communication infrastructure
- Broadband signal processing systems
Procurement Notes
Verify part authenticity through authorized distributors or direct manufacturer channels. Confirm that the specific suffix NR4 matches project requirements. Check datasheet revisions for any updates to electrical characteristics or pin configurations. Ensure compliance with RoHS and other relevant environmental standards before finalizing procurement decisions.
Selection Notes
Select this component when a 10 W output at 1.09 GHz is required with 25 dB gain. Consider the PLD-1.5 package constraints for PCB layout. Evaluate thermal management needs due to power dissipation. Compare against alternative LDMOS devices if different voltage ratings or frequencies are needed for the specific application design.
Part Context
This device belongs to the family of RF power transistors intended for infrastructure use. It complements lower-power variants by offering higher output capabilities while maintaining linearity. The PLD-1.5 package allows for dense mounting in modern electronic assemblies requiring high-frequency performance.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing circuit designs before considering alternatives.
