MMRF1020-04GNR3

$199.90

Description：RF MOSFET LDMOS 48V OM780G-4
Series：-

SKU:bcde1b17ba1b Category: RF FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 48V OM780G-4
Series：-
Mfr：NXP USA Inc.
Package：Tape & Reel (TR)
Technology：LDMOS
Frequency：920MHz
Gain：19.5dB
Voltage - Test：48 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：860 mA
Power - Output：100W
Voltage - Rated：105 V
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：OM-780G-4L
Supplier Device Package：OM-780G-4L
Configuration：Dual

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MMRF1020-04GNR3

Overview

The MMRF1020-04GNR3 is a symmetrical Doherty RF power LDMOS transistor designed for cellular base station applications in the 720 to 960 MHz range. It supports wideband power amplifier operations up to 1000 MHz with saturated power levels reaching 500 watts. The device operates at a drain-source voltage of 48 Vdc and delivers 100 W average output power under typical single-carrier W-CDMA conditions. It features an internally matched input, integrated ESD protection, and is supplied in tape and reel packaging.

Feature Summary

Production tested in a symmetrical Doherty configuration
Greater negative gate-source voltage range for improved Class C operation
Designed for digital predistortion error correction systems

Applications

Cellular base station applications
Wideband power amplifier applications from 600 to 1000 MHz
Digital predistortion error correction systems

Procurement Notes

Verify the specific ordering suffix R3 confirms the package type and reel quantity of 250 units on a 32 mm tape width. Confirm RoHS compliance status as documented in the datasheet. Ensure the component matches the OM-780G-4L plastic package variant associated with the GNR3 designation. Validate that the source provides the original Freescale Semiconductor documentation.

Selection Notes

Select this component for high-power linear amplification requiring symmetrical Doherty architecture. It is suitable for designs needing internal input matching to simplify circuit layout. Consider its capability for digital predistortion integration when designing modern cellular base stations. Verify thermal management requirements align with the junction-to-case thermal resistance specifications provided.

Part Context

This part belongs to the NXP USA Inc. (formerly Freescale Semiconductor) RF Power LDMOS Transistor family. It is specifically engineered for high-efficiency carrier and peaking side performance in Doherty configurations. The device utilizes N-channel enhancement-mode lateral MOSFET technology optimized for broadband RF applications.