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Product Detailed Parameters
- Description：RF MOSFET LDMOS 7.5V PLD-1.5W
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Technology：LDMOS
- Frequency：870MHz
- Gain：15.2dB
- Voltage - Test：7.5 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：100 mA
- Power - Output：7.3W
- Voltage - Rated：30 V
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：PLD-1.5W
- Supplier Device Package：PLD-1.5W
- Configuration：-
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Overview
The MMRF1021NT1 is an N-channel enhancement-mode lateral MOSFET (LDMOS) RF power transistor designed for handheld two-way radio applications across the 136 to 941 MHz frequency range. It delivers approximately 7 W of output power with a 7.5 Vdc drain supply and 100 mA quiescent current. The device features high gain, wideband performance, and exceptional ruggedness, capable of withstanding load mismatches exceeding 65:1 VSWR without degradation. Packaged in a PLD-1.5W format, it includes integrated ESD protection and stability enhancements.
Feature Summary
- Unmatched input and output terminals enabling wide frequency range utilization
- Extreme ruggedness characterized for operation under severe load mismatch conditions
- High linearity suitable for TETRA and SSB modulation schemes
- Integrated electrostatic discharge (ESD) protection and stability enhancements
Applications
- Output stage for VHF band handheld radios
- Output stage for UHF band handheld radios
- Output stage for 700–800 MHz handheld radios
Procurement Notes
Verify the specific ordering suffix 'T1' corresponds to the required tape and reel configuration containing 1,000 units on a 16 mm tape width and 7-inch reel. Confirm that the component source is Freescale Semiconductor or its successor entity, as historical documentation may reference the original manufacturer name. Ensure compatibility with the PLD-1.5W package dimensions for PCB layout integration.
Selection Notes
Select this component for designs requiring broad bandwidth coverage from 136 to 941 MHz with a single device. It is optimized for common-source amplifier configurations in large-signal applications. Consider the 7.5 Vdc operating voltage requirement and the need for external matching networks due to the unmatched input and output ports. Evaluate thermal management strategies given the junction-to-case thermal resistance characteristics.
Part Context
This device belongs to the RF Power LDMOS Transistor family, specifically engineered for portable communication equipment. It represents a solution for designers needing high reliability and linear performance in compact handheld military and commercial radio systems. The PLD-1.5W package provides a balance between power handling capability and physical footprint constraints typical of mobile transceivers.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
FAQ
What is the maximum VSWR the MMRF1021NT1 can withstand?
The device is characterized to withstand a VSWR greater than 65:1 at all phase angles without device degradation when operated with 3 dB overdrive.
Does the MMRF1021NT1 have internal matching networks?
No, the device features unmatched input and output terminals, allowing for wide frequency range utilization but requiring external matching networks.
What is the recommended drain supply voltage for operation?
The typical operating voltage is 7.5 Vdc, with a maximum operating voltage rating of 12.5 Vdc.
