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The MMRF1050HR6 is an N-channel enhancement-mode lateral MOSFET designed for short pulse applications operating at frequencies from 850 to 950 MHz. It delivers a peak output power of 1050 W with a drain efficiency of 63.7% and a power gain of 21.3 dB under typical conditions (VDD = 50 Vdc, IDQ(A+B) = 100 mA, 100 µsec pulse width, 20% duty cycle). The device features integrated ESD protection, internal input/output matching, and high ruggedness capable of handling >20:1 VSWR without degradation.
Verify the specific ordering suffix R6 corresponds to the required tape and reel configuration containing 150 units on a 56 mm wide, 13-inch reel. Confirm that the NI-1230H-4S package type matches the mechanical constraints of the target assembly. Ensure compatibility with the specified thermal management requirements for pulse operation.
Select this component for applications requiring high peak power in the 850–950 MHz band with strict pulse duty cycles. The internal matching simplifies impedance network design, while the high VSWR tolerance reduces the need for complex protection circuits. Evaluate thermal performance based on the junction-to-case thermal impedance provided for the specific pulse width and duty cycle parameters.
This transistor belongs to NXP Semiconductors' RF Power LDMOS family, specifically engineered for high-power, high-ruggedness applications. The MMRF1050H variant serves as the base part number, with the HR6 suffix indicating the specific reel packaging format. It is distinct from continuous wave (CW) variants by its optimization for short pulse durations.
Public confirmed substitute part numbers are not available in the provided documentation.