MMRF1050HR6

MMRF1050HR6

$579.01
  • Description:RF MOSFET LDMOS 50V NI1230
  • Series:-

SKU:7f5e257c9e39 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF MOSFET LDMOS 50V NI1230
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS (Dual)
  • Frequency:850MHz ~ 950MHz
  • Gain:21.3dB
  • Voltage - Test:50 V
  • Current Rating (Amps):1µA
  • Noise Figure:-
  • Current - Test:100 mA
  • Power - Output:1050W
  • Voltage - Rated:105 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-979A
  • Supplier Device Package:NI-1230-4H
  • Configuration:2 N-Channel

Download product information

MMRF1050HR6

Overview

The MMRF1050HR6 is an N-channel enhancement-mode lateral MOSFET designed for short pulse applications operating at frequencies from 850 to 950 MHz. It delivers a peak output power of 1050 W with a drain efficiency of 63.7% and a power gain of 21.3 dB under typical conditions (VDD = 50 Vdc, IDQ(A+B) = 100 mA, 100 µsec pulse width, 20% duty cycle). The device features integrated ESD protection, internal input/output matching, and high ruggedness capable of handling >20:1 VSWR without degradation.

Feature Summary

  • High ruggedness design capable of handling greater than 20:1 VSWR at all phase angles without device degradation
  • Integrated electrostatic discharge (ESD) protection with an extended negative voltage range to improve Class C operation and gate voltage pulsing
  • Internally matched input and output networks for broadband operation and simplified circuit integration
  • Qualified for continuous operation up to 50 Vdc drain-source voltage

Applications

  • Land-based UHF radar systems
  • Sea-based UHF radar systems
  • Short pulse RF power amplifier stages

Procurement Notes

Verify the specific ordering suffix R6 corresponds to the required tape and reel configuration containing 150 units on a 56 mm wide, 13-inch reel. Confirm that the NI-1230H-4S package type matches the mechanical constraints of the target assembly. Ensure compatibility with the specified thermal management requirements for pulse operation.

Selection Notes

Select this component for applications requiring high peak power in the 850–950 MHz band with strict pulse duty cycles. The internal matching simplifies impedance network design, while the high VSWR tolerance reduces the need for complex protection circuits. Evaluate thermal performance based on the junction-to-case thermal impedance provided for the specific pulse width and duty cycle parameters.

Part Context

This transistor belongs to NXP Semiconductors' RF Power LDMOS family, specifically engineered for high-power, high-ruggedness applications. The MMRF1050H variant serves as the base part number, with the HR6 suffix indicating the specific reel packaging format. It is distinct from continuous wave (CW) variants by its optimization for short pulse durations.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

MMRF1050HR6MMRF1050HR6
$579.01
Buy Now