MMRF1304NR1

Overview

The MMRF1304NR1 is an LDMOS RF power transistor manufactured by NXP USA Inc. It operates within a frequency range of 1.8 to 2000 MHz, delivering 25 W of continuous wave output power at a 50 V supply voltage. The device features a gain of 25.4 dB and utilizes a TO-270-2 package. Designed for both narrowband and broadband applications, it supports CW or pulse modes.

Feature Summary

• Utilizes LDMOS technology for high-performance RF power amplification
• Suitable for narrowband and broadband continuous wave or pulse applications
• Operates across a wide frequency spectrum from 1.8 to 2000 MHz

Applications

• Narrowband RF power amplification
• Broadband RF power amplification
• Continuous wave (CW) signal generation
• Pulse mode RF applications

Procurement Notes

Verify component authenticity through authorized NXP channels. Confirm the obsolete status indicated by distributors against current production schedules. Ensure the TO-270-2 package matches design requirements. Request official datasheets for final electrical parameter validation before integration.

Selection Notes

Select this component for designs requiring 25 W output in the 1.8–2000 MHz band. Consider the 50 V operating voltage and TO-270-2 thermal constraints. Evaluate compatibility with existing bias networks. Verify that the 25.4 dB gain meets system link budget requirements without excessive external amplification.

Part Context

This part belongs to NXP’s MMRF series of RF power transistors. It is designed for demanding radio communication environments. The LDMOS construction provides robustness against load mismatches. It serves as a discrete solution for mid-power RF stages in professional equipment.

Replacement Considerations

The datasheet lists the MMRF1304GNR1 as a related variant. Verify pinout and thermal pad configurations when substituting. Check if the alternative offers identical electrical performance for the specific application frequency.