MMRF1305HR5

Overview

The MMRF1305HR5 is an RF power LDMOS transistor manufactured by NXP Semiconductors. It is designed for narrowband and broadband continuous wave or pulse applications operating at frequencies from 1.8 to 2000 MHz. The device provides 100 W output power with a gain of 26 dB at 512 MHz. Key electrical parameters include a drain-source breakdown voltage of 133 V, a gate-source threshold voltage of 2.7 V, and a maximum operating temperature of +150 C. The component utilizes a dual lateral N-channel structure and is housed in the NI-780H-4 surface-mount package.

Feature Summary

• Dual lateral N-channel LDMOS construction for high-power RF amplification
• Broadband operational capability covering 1.8 to 2000 MHz
• Suitable for both narrowband and broadband CW or pulse applications

Applications

• Narrowband RF power amplification
• Broadband CW signal amplification
• Pulse application RF amplification

Procurement Notes

Verify current availability status as this product may be discontinued or subject to end-of-life notices. Confirm RoHS compliance and lead-free status through official NXP documentation prior to procurement. Check for any applicable tariff regulations if shipping to specific regions. Ensure the supplier provides valid traceability and original manufacturer certification to guarantee component authenticity and quality.

Selection Notes

Select this component for designs requiring high output power within the 1.8 to 2000 MHz range. Consider the 133 V breakdown voltage for biasing requirements. Evaluate thermal management needs given the +150 C maximum junction temperature rating. Compare against alternative models in the MMRF series for specific frequency or power constraints. Ensure the NI-780H-4 package footprint matches the PCB layout design.

Part Context

The MMRF1305HR5 belongs to the family of RF power transistors offered by NXP Semiconductors. These devices are engineered for robust performance in demanding radio frequency environments. The part represents a solution for integrating high-efficiency amplification into communication systems. It complements other NXP RF components used in similar frequency bands and power classes.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult NXP Semiconductors directly for recommended alternatives or obsolescence management options.