MMRF1305HSR5

Overview

The MMRF1305HSR5 is a high ruggedness N-channel enhancement-mode lateral MOSFET RF power transistor from Freescale Semiconductor. It operates across a frequency range of 1.8 to 2000 MHz and delivers up to 100 W output power at 50 V DC. The device features unmatched input and output matching for very broadband operation, integrated stability enhancements, low thermal resistance, and integrated ESD protection circuitry.

Feature Summary

• Designed for both narrowband and broadband continuous wave or pulse applications in military communications and radar systems.
• Fabricated using an enhanced ruggedness platform suitable for environments with high voltage standing wave ratios.
• Features integrated electrostatic discharge protection and stability enhancements for reliable operation.

Applications

• Military radio communications
• Broadband radar systems
• High VSWR tolerant amplifier designs

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and reel specifications. Ensure compatibility with the intended frequency band and thermal management requirements. Confirm component authenticity through authorized distribution channels. Review the latest datasheet revision for any updates to electrical characteristics or handling instructions prior to integration.

Selection Notes

Select this component for designs requiring wide bandwidth coverage from 1.8 to 2000 MHz with high power output capabilities. Consider its ruggedness for applications prone to load mismatches. Evaluate thermal performance based on junction-to-case resistance values provided in the datasheet. Ensure gate drive voltages remain within specified limits to prevent device degradation.

Part Context

This part belongs to the MMRF1305H series of RF Power LDMOS Transistors. It is manufactured by Freescale Semiconductor, Inc., which has since become part of NXP Semiconductors. The device is designed as a robust solution for high-power RF amplification in demanding communication and radar environments.

Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Do not assume cross-compatibility with other RF power transistors without verifying pinout, electrical ratings, and thermal characteristics.

FAQ

What is the maximum drain-source voltage rating?

The maximum drain-source voltage (VDSS) rating is -0.5 to +133 Vdc.

Does the device include built-in protection features?

Yes, the MMRF1305HSR5 includes integrated ESD protection circuitry and stability enhancements.

What is the operating temperature range?

The case operating temperature range is -40 to +150 °C, and the storage temperature range is -65 to +150 °C.