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The MMRF1308HR5 is an N-Channel Enhancement-Mode Lateral MOSFET RF Power transistor designed for broadband applications between 1.8 and 600 MHz. It delivers 600 W peak pulse power at a 20% duty cycle with 100 µsec pulse width, or 600 W average continuous wave power. The device operates at a maximum drain-source voltage of 50 Vdc and features unmatched input and output ports to facilitate wide frequency range utilization.
Verify the specific ordering suffix against official documentation to confirm packaging details. The R5 suffix indicates tape and reel packaging with 50 units per reel on 56 mm tape width. Confirm RoHS compliance status and material declarations prior to procurement to ensure adherence to project environmental standards.
Select this component for designs requiring high power density across a broad frequency spectrum from 1.8 to 600 MHz. Ensure the thermal management system can maintain the case temperature within specified limits during operation. Verify that the gate-source voltage range supports the intended Class A, AB, or C biasing requirements for optimal linearity and efficiency.
This part belongs to the Freescale Semiconductor (now NXP) RF Power LDMOS Transistor family. It is characterized by high ruggedness and internal ESD protection. The device utilizes a NI-1230H-4S package configuration suitable for surface mount assembly in high-power RF amplifier circuits.
Consult official cross-reference data for verified substitutes. No direct public substitute part numbers are confirmed in the provided datasheet.