MMRF1308HR5

MMRF1308HR5

$236.56
  • Description:RF MOSFET LDMOS 50V NI1230
  • Series:-

SKU:c747915cf5c4 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF MOSFET LDMOS 50V NI1230
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:LDMOS
  • Frequency:230MHz
  • Gain:25dB
  • Voltage - Test:50 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:100 mA
  • Power - Output:600W
  • Voltage - Rated:133 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-979A
  • Supplier Device Package:NI-1230-4H
  • Configuration:Dual

Download product information

MMRF1308HR5

Overview

The MMRF1308HR5 is an N-Channel Enhancement-Mode Lateral MOSFET RF Power transistor designed for broadband applications between 1.8 and 600 MHz. It delivers 600 W peak pulse power at a 20% duty cycle with 100 µsec pulse width, or 600 W average continuous wave power. The device operates at a maximum drain-source voltage of 50 Vdc and features unmatched input and output ports to facilitate wide frequency range utilization.

Feature Summary

  • Unmatched input and output designs allowing wide frequency range utilization
  • Capable of handling a load mismatch of 65:1 VSWR at all phase angles
  • Suitable for linear applications with appropriate biasing in single-ended or push-pull configurations

Applications

  • Military, aerospace, and defense systems requiring high ruggedness
  • Industrial laser and plasma exciters
  • Analog and digital broadcast transmitters
  • Radio and land mobile communication equipment

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. The R5 suffix indicates tape and reel packaging with 50 units per reel on 56 mm tape width. Confirm RoHS compliance status and material declarations prior to procurement to ensure adherence to project environmental standards.

Selection Notes

Select this component for designs requiring high power density across a broad frequency spectrum from 1.8 to 600 MHz. Ensure the thermal management system can maintain the case temperature within specified limits during operation. Verify that the gate-source voltage range supports the intended Class A, AB, or C biasing requirements for optimal linearity and efficiency.

Part Context

This part belongs to the Freescale Semiconductor (now NXP) RF Power LDMOS Transistor family. It is characterized by high ruggedness and internal ESD protection. The device utilizes a NI-1230H-4S package configuration suitable for surface mount assembly in high-power RF amplifier circuits.

Replacement Considerations

Consult official cross-reference data for verified substitutes. No direct public substitute part numbers are confirmed in the provided datasheet.

MMRF1308HR5MMRF1308HR5
$236.56
Buy Now