MMRF1308HSR5

Overview

The MMRF1308HSR5 is a Radio Frequency Power Metal-Oxide-Semiconductor Field-Effect Transistor manufactured by NXP USA Inc. It utilizes Silicon technology and is housed in an NI-1230-4S package. The device operates within the 900 MHz to 1215 MHz frequency range, delivering 1000 W of peak output power at a 50 V supply voltage.

Feature Summary

• Designed for high-power RF applications requiring significant peak output capability
• Utilizes LDMOS technology for robust performance in demanding environments

Applications

• Broadband communication systems
• Industrial, Scientific, and Medical (ISM) equipment
• Military radar transmitters

Procurement Notes

Verify component authenticity through authorized channels due to discontinued status. Confirm datasheet revisions match design requirements. Ensure handling procedures comply with electrostatic discharge standards for sensitive semiconductor devices during installation.

Selection Notes

Evaluate thermal management capabilities to sustain 1000 W peak operation. Verify impedance matching networks align with the specified frequency band. Consider duty cycle limitations inherent to peak power ratings when designing amplifier stages.

Part Context

This component belongs to the MMRF series of RF power transistors from NXP Semiconductors. These devices are engineered for high-efficiency amplification in wideband applications, offering reliable performance across industrial and defense sectors.

Replacement Considerations

Consult official NXP documentation for direct substitutes. Cross-reference pinouts and electrical characteristics carefully before integrating alternative components into existing designs.