MMRF1310HR5

Overview

The MMRF1310HR5 is a lateral N-channel broadband RF power MOSFET manufactured by NXP Semiconductors. It operates within the frequency range of 1.8 MHz to 600 MHz and delivers an output power of 300 W at a drain voltage of 50 V. The device features a gain of 28 dB and utilizes an NI-780H-4 surface-mount package. Key electrical specifications include a drain-source breakdown voltage (Vds) of 133 V, a maximum operating temperature of +150°C, and a power dissipation rating of 1.05 kW.

Feature Summary

• Broadband operational capability spanning from 1.8 MHz to 600 MHz for versatile frequency coverage.
• High power output performance delivering 300 W with significant gain efficiency.
• Robust thermal management supporting high junction temperatures up to +150°C.
• Dual-channel configuration integrated into a compact surface-mount housing.

Applications

• Broadband RF power amplification in communication infrastructure
• Industrial, Scientific, and Medical (ISM) radio frequency equipment
• Test and measurement instrumentation requiring wideband signal generation

Procurement Notes

Verify component authenticity through authorized distribution channels due to end-of-life status. Confirm RoHS compliance documentation matches current regulatory requirements. Ensure storage conditions adhere to moisture sensitivity guidelines prior to soldering. Validate that the NI-780H-4 footprint aligns with existing PCB designs to prevent mechanical integration issues during assembly.

Selection Notes

Select this component when broadband coverage between 1.8 MHz and 600 MHz is required alongside moderate power levels. Consider the 133 V breakdown voltage for robustness against transient overvoltages. Evaluate the surface-mount packaging for automated assembly compatibility. Compare thermal resistance characteristics against system heat dissipation capabilities to ensure reliable operation at elevated temperatures.

Part Context

This device belongs to the MMRF series of RF power transistors designed for demanding radio frequency applications. It represents a solution for engineers needing reliable performance across multiple frequency bands without switching components. The LDMOS technology provides a balance of linearity and power density suitable for modern electronic systems.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.