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Product Detailed Parameters
- Description：RF MOSFET LDMOS 50V NI1230
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：LDMOS
- Frequency：1.03GHz
- Gain：19.6dB
- Voltage - Test：50 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：100 mA
- Power - Output：1000W
- Voltage - Rated：112 V
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Package / Case：SOT-979A
- Supplier Device Package：NI-1230-4H
- Configuration：Dual
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Overview
The MMRF1312HR5 is an N-Channel enhancement-mode lateral MOSFET designed for pulse applications operating at frequencies from 900 to 1215 MHz. It delivers up to 1615 W peak output power with a drain efficiency of 54.0% at 900 MHz under 52 Vdc operation. The device features internal input and output matching, handles greater than 20:1 VSWR, and includes integrated ESD protection.
Feature Summary
- Internally matched for broadband operation
- High ruggedness handling > 20:1 VSWR
- Integrated ESD protection
Applications
- Air traffic control systems (ATC)
- Distance measuring equipment (DME)
- Tactical air navigation (TACAN)
Procurement Notes
Verify the R5 suffix indicates a reel packaging format containing 50 units on a 56 mm tape width within a 13-inch reel. Confirm the NI-1230H-4S package variant matches your assembly requirements. Ensure compatibility with the specified maximum ratings before procurement.
Selection Notes
Select this component for high-power L-band radar applications requiring robust performance in pulse modes. The internal matching simplifies circuit design for single-ended or push-pull configurations. Verify thermal management capabilities align with the specified junction temperature range and dissipation limits.
Part Context
This part belongs to the MMRF1312 series of RF Power LDMOS transistors. It shares core specifications with the MMRF1312H and MMRF1312HS variants, differing primarily in packaging and reel configuration. The HR5 designation specifically denotes the reel-packaged version of the H-series device.
Replacement Considerations
MMRF1312H
FAQ
What is the maximum drain-source voltage rating?
The maximum Drain-Source Voltage (VDSS) rating is +112 Vdc.
Can the device operate in continuous wave mode?
The datasheet characterizes the device for pulse applications with large duty cycles and long pulses, such as those found in radar systems.
What is the typical power gain at 1030 MHz?
In a narrowband production test fixture at 1030 MHz, the typical power gain (Gps) is 19.6 dB.
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