MMRF1312HSR5

Overview

The MMRF1312HSR5 is an RF power LDMOS transistor designed for pulse applications operating between 900 MHz and 1215 MHz. It features a dual N-channel enhancement-mode lateral MOSFET structure housed in an NI-1230S-4S package. The device supports up to 52 Vdc drain-source voltage with a breakdown rating of 112 Vdc. In a typical narrowband reference circuit at 1030 MHz, it delivers 1000 W peak output power with 19.6 dB gain and 59.7% drain efficiency under 128 µsec pulse width and 10% duty cycle conditions.

Feature Summary

• Internally input and output matched for broadband operation
• High ruggedness handling greater than 20:1 VSWR
• Integrated ESD protection with enhanced negative voltage range

Applications

• Air traffic control systems including ground-based secondary radars
• IFF interrogators or transponders
• Distance measuring equipment (DME)
• Tactical air navigation (TACAN)

Procurement Notes

Verify the specific ordering suffix R5 confirms the reel packaging format containing 50 units on a 56 mm tape width within a 13-inch reel. Confirm the HS variant designation corresponds to the earless NI-1230S-4S package style rather than the hinged or gull wing alternatives. Ensure compatibility with existing thermal management solutions for the specified case operating temperature range.

Selection Notes

Select this component for high-power military and commercial L-band radar applications requiring large duty cycles and long pulses. The internal matching simplifies design integration for single-ended, push-pull, or quadrature configurations. Validate that the system can accommodate the required gate quiescent voltage and current settings for optimal Class C operation during pulsed modes.

Part Context

This device belongs to the Airfast RF Power LDMOS Transistors family from NXP Semiconductors. It shares core electrical characteristics with the MMRF1312H and MMRF1312GS models, differing primarily in the mechanical package configuration and mounting style. The HS variant specifically utilizes the NI-1230S-4S earless package suitable for direct board mounting without hinge hardware.

Replacement Considerations

MMRF1312H

FAQ

What is the maximum drain-source voltage rating?

The absolute maximum Drain-Source Voltage (VDSS) is rated at +112 Vdc.

How does the device handle load mismatch conditions?

The device exhibits high ruggedness and can withstand a VSWR greater than 20:1 at all phase angles without degradation when subjected to 3 dB overdrive.

What is the recommended quiescent current for functional testing?

Functional tests are typically conducted with a total quiescent current (IDQ A+B) of 100 mA.