MMRF1314GSR5

Overview

The MMRF1314GSR5 is a dual LDMOS RF power transistor manufactured by NXP USA Inc. It operates within the 960-1215 MHz frequency range, delivering a peak output power of 1000 W at a rated voltage of 50 V. The device features an internal gain of 17.7 dB and utilizes the NI-1230-4S package with gull-wing leads for base mounting. Designed for broadband applications, it includes internal input and output matching networks to facilitate ease of use in single-ended, push-pull, or quadrature configurations.

Feature Summary

• Dual LDMOS construction for high-power RF generation
• Internal input and output matching for broadband operation
• Suitable for single-ended, push-pull, or quadrature topologies

Applications

• Pulse radar systems
• Broadband RF amplification
• Military communication transmitters

Procurement Notes

Verify component authenticity through authorized NXP channels due to obsolete status risks. Confirm package integrity upon receipt, as the NI-1230-4S gull-wing leads require precise soldering profiles. Ensure ESD protection protocols are strictly followed during handling and installation to prevent gate oxide damage. Cross-reference datasheet revisions to confirm electrical parameters match design requirements.

Selection Notes

Select this component when designing systems requiring 1000 W peak power in the sub-1.2 GHz band. The internal matching simplifies circuit design compared to unmatched devices. Consider thermal management capabilities of the base-mounted package. Evaluate system topology compatibility with its dual configuration for balanced drive requirements.

Part Context

This part belongs to the MMRF1314 series of high-power LDMOS transistors. It shares architectural similarities with other NXP RF power devices but is distinct in its specific frequency coverage and power handling capabilities. The series targets demanding RF applications where linearity and efficiency are critical.

Replacement Considerations

Public confirmed substitute part numbers are not available for this obsolete component. Designers should consult NXP technical support for direct replacements or evaluate alternative high-power LDMOS devices with compatible pinouts and electrical specifications.