MMRF2010NR1

Overview

The MMRF2010NR1 is a two-stage RF LDMOS wideband integrated power amplifier designed for IFF transponder applications operating from 1030 to 1090 MHz. It delivers 250 W peak output power with a typical gain of 34.1 dB and second stage efficiency of 61.0% at 1030 MHz under 52 Vdc pulse conditions (128 μsec, 10% duty cycle). The device features on-chip input and interstage matching, single-ended configuration, and integrated ESD protection. It operates within a drain-source voltage range of -0.5 to +100 Vdc and supports junction temperatures up to 225 °C.

Feature Summary

• Characterized over the 1030–1090 MHz frequency band
• Includes on-chip input and interstage matching networks
• Features integrated quiescent current temperature compensation with enable/disable function
• Provides integrated electrostatic discharge protection

Applications

• Driver PA for high power pulse applications
• IFF (Identification Friend or Foe) transponders
• Secondary radar systems

Procurement Notes

Verify the specific ordering suffix against the manufacturer's documentation to confirm package type and reel specifications. The R1 suffix indicates a tape and reel quantity of 500 units with a 44 mm tape width on a 13-inch reel. Confirm that the required variant matches the intended mechanical footprint and thermal management requirements before finalizing procurement orders.

Selection Notes

Select this component for designs requiring high peak power in the 1030–1090 MHz range. Ensure the application utilizes appropriate pulse widths and duty cycles to maintain thermal limits. Verify compatibility with the 50 Vdc to 52 Vdc operating voltage range. Consider the TO-270WB-14 plastic package for standard mounting or the TO-270WBG-14 variant if gull-wing leads are necessary for assembly processes.

Part Context

This part belongs to NXP's RF LDMOS Wideband Integrated Power Amplifiers family. These devices are engineered for robust performance in demanding RF environments. The MMRF2010N specifically targets pulse applications, offering high ruggedness and low thermal resistance compared to continuous wave counterparts. It integrates multiple stages into a single compact package to simplify circuit design.

Replacement Considerations

Consult official NXP documentation for verified substitute part numbers. No direct public substitutes are listed in the provided datasheet.

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature range extends up to +225 °C.

Does the device include internal matching networks?

Yes, the MMRF2010NR1 features on-chip input (50 ohm) and interstage matching.

How does the device handle load mismatch?

It is rated to withstand greater than 20:1 VSWR at all phase angles without device degradation when tested with 0.316 W peak input power at 52 Vdc.