MMRF5014HR5

Overview

The MMRF5014HR5 is a GaN on SiC RF power transistor optimized for wideband operation up to 2700 MHz. It delivers 125 W CW output at 50 V drain bias with an internally matched input for extended bandwidth. The device features high gain, ruggedness exceeding 20:1 VSWR, and low thermal resistance. It operates within the 1–2700 MHz band and supports both continuous wave and pulse applications.

Feature Summary

• Advanced GaN on SiC technology providing high power density
• Decade bandwidth performance covering 1–2700 MHz
• Input matched for extended wideband operation
• High ruggedness capable of withstanding > 20:1 VSWR

Applications

• Military narrowband and multi-octave wideband amplifiers
• Radar systems
• Electronic countermeasures (ECM) jammers
• Public mobile radios including emergency service communications
• Industrial, scientific, and medical equipment

Procurement Notes

Verify the specific ordering suffix R5 corresponds to the reel packaging configuration containing 50 units on a 32 mm tape width and 13-inch reel. Confirm that the NI-360H-2SB package designation matches the required mechanical footprint for your assembly process. Ensure compliance with RoHS directives as indicated in the product documentation.

Selection Notes

Select this component for designs requiring broad frequency coverage from 1 to 2700 MHz without external input matching networks. Consider the 50 V operating voltage and 350 mA quiescent current requirements for bias circuit design. Evaluate the thermal management needs based on the specified junction-to-case thermal resistance values for your expected duty cycle and ambient conditions.

Part Context

This part belongs to NXP's MMRF5014H series of wideband RF power GaN transistors. The HR5 suffix denotes the specific reel packaging variant of the base MMRF5014H device. It is designed to replace older silicon-based solutions where higher power density and wider bandwidth are critical for system performance.

Replacement Considerations

Direct substitutes include other MMRF5014H variants such as MMRF5014HSR5 if different packaging is required. Verify pinout compatibility with the NI-360H-2SB package when transitioning between different suffixes or manufacturers.

FAQ

Is the MMRF5014HR5 internally input matched?

Yes, the device includes internal input matching to provide extended wideband performance across its operating range.

What is the maximum VSWR the device can withstand?

The device exhibits high ruggedness and can withstand a VSWR greater than 20:1 at all phase angles without degradation.

What is the recommended biasing sequence for turn-on?

Set VGS to -5 V, apply nominal VDS supply voltage (50 V), increase VGS until IDS current is attained, then apply RF input power.