Single Bipolar Transistors MMST5551-7 product image

MMST5551-7

$0.32
  • Description:TRANS NPN 160V 0.2A SC70-3
  • Series:*

SKU:852f44d3d7d0 Category: Brand:

  
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MMST5551-7 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is TRANS NPN 160V 0.2A SC70-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for MMST5551-7

  • Description:TRANS NPN 160V 0.2A SC70-3
  • Series:*
  • Mfr:Diodes Incorporated
  • Package:Cut Tape (CT)
  • Transistor Type:-
  • Current - Collector (Ic) (Max):-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • Power - Max:-
  • Frequency - Transition:-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for MMST5551-7

MMST5551-7

Single Bipolar Transistors Overview

The MMST5551 is a high-voltage NPN small-signal transistor manufactured by Diodes Incorporated. It utilizes epitaxial planar die construction and is housed in an ultra-small SOT-323 surface-mount package. The device supports a continuous collector current of 200 mA, with maximum ratings of 160 V for collector-emitter voltage (VCEO) and 180 V for collector-base voltage (VCBO). Power dissipation is rated at 200 mW, and the transition frequency reaches up to 300 MHz. Operating temperatures range from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

  • Epitaxial planar die construction for reliable performance
  • Ultra-small SOT-323 surface-mount package design
  • High-voltage capability suitable for demanding applications
  • Totally lead-free and fully RoHS compliant

Single Bipolar Transistors Applications

  • Low power amplification circuits
  • Electronic switching applications
  • Automotive electronics requiring specific change control

Single Bipolar Transistors Procurement Notes

Verify that the ordered part number matches the exact specifications required for your circuit design. Confirm compliance with relevant automotive standards if the application demands AEC-Q qualification or IATF 16949 manufacturing certification. Ensure proper handling procedures are followed due to the small form factor and moisture sensitivity level.

Single Bipolar Transistors Selection Notes

Select this component when space constraints require an ultra-small SMD package alongside high-voltage requirements. Consider the complementary MMST5401 PNP type for push-pull configurations. Evaluate thermal resistance values against your PCB layout and ambient temperature conditions to ensure safe operation within the specified power dissipation limits.

Single Bipolar Transistors Part Context

This component belongs to the MMST series of high-voltage transistors produced by Diodes Incorporated. It serves as the NPN counterpart to the MMST5401 PNP transistor. The series is designed for general-purpose use in compact electronic designs where high reliability and small footprint are critical factors.

Single Bipolar Transistors Replacement Considerations

MMST5551Q-7-F

Single Bipolar Transistors FAQ

Is the MMST5551 qualified for automotive applications?

Standard versions are not automatically automotive-grade. For automotive applications requiring specific change control, refer to the related automotive grade parts with the Q-suffix.

What is the maximum collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage (VCEO) is 160 V.

Does the device meet halogen-free standards?

Yes, the MMST5551 is a halogen- and antimony-free "Green" device containing less than 900ppm bromine and chlorine combined.

MMST5551-7MMST5551-7
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