MNS2N3501UB

$9.62

Description：SMALL-SIGNAL BJT
Series：*

SKU:1e682deb2422 Category: Single Bipolar Transistors Brand: Microchip Technology

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Product introduction

MNS2N3501UB is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is SMALL-SIGNAL BJT. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for MNS2N3501UB

Description：SMALL-SIGNAL BJT
Series：*
Mfr：Microchip Technology
Package：Bulk
Transistor Type：-
Current - Collector (Ic) (Max)：-
Voltage - Collector Emitter Breakdown (Max)：-
Vce Saturation (Max) @ Ib, Ic：-
Current - Collector Cutoff (Max)：-
DC Current Gain (hFE) (Min) @ Ic, Vce：-
Power - Max：-
Frequency - Transition：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for MNS2N3501UB

MNS2N3501UB

Single Bipolar Transistors Overview

The MNS2N3501UB is a silicon NPN small-signal bipolar junction transistor manufactured by Microchip Technology. It features a maximum collector-emitter voltage of 150V and a continuous collector current rating of 300mA. The device has a power dissipation capacity of 500mW and operates within a temperature range of -55°C to +175°C. Packaged in the UB surface-mount format, it is designed for high-reliability applications requiring robust performance under extreme conditions.

Single Bipolar Transistors Feature Summary

High-temperature operation capability up to 175°C
Radiation-hardened design suitable for space environments
Surface-mount packaging for automated assembly

Single Bipolar Transistors Applications

Military aerospace systems
Satellite communication equipment
Spacecraft electronic subsystems

Single Bipolar Transistors Procurement Notes

Verify that the specific part number includes the required radiation hardness specifications and temperature range certifications. Confirm package integrity upon receipt as these components are sensitive to environmental exposure during storage and handling.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits for harsh environments requiring high thermal stability and radiation tolerance. Ensure the application voltage and current limits remain within the specified 150V and 300mA ratings to maintain reliability.

Single Bipolar Transistors Part Context

This transistor belongs to Microchip's specialized line of radiation-hardened discrete semiconductors. These devices are engineered to withstand ionizing radiation effects common in orbital environments, ensuring long-term operational stability where standard commercial parts would fail.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers include JAN2N3501UB and JANS2N3501UB. Verify pinout compatibility and electrical parameter equivalence before substitution.