MPS3415 TRE TIN/LEAD

Single Bipolar Transistors Overview

The MPS3415 TRE TIN/LEAD is a single silicon NPN bipolar junction transistor manufactured by Central Semiconductor Corp. It utilizes a through-hole TO-18 metal can package for mounting. The device operates in enhancement mode with a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 60 V. It features a power dissipation rating of 500 mW and a transition frequency of 200 MHz. The component supports a maximum operating temperature of 200 °C and a minimum operating temperature of -65 °C.

Single Bipolar Transistors Feature Summary

• Utilizes a hermetically sealed TO-18 metal can package for environmental protection
• Constructed from silicon material for stable semiconductor performance
• Designed for general-purpose amplification and switching applications

Single Bipolar Transistors Applications

• General-purpose amplification circuits
• Electronic switching applications
• High-frequency signal processing

Single Bipolar Transistors Procurement Notes

Verify the specific suffix designation to confirm the tin/lead termination plating, as this affects solderability and regulatory compliance. Ensure the TO-18 package dimensions match the target footprint. Confirm the manufacturer is Central Semiconductor Corp to guarantee the specified electrical characteristics and reliability standards are met.

Single Bipolar Transistors Selection Notes

Select this component when a hermetically sealed metal package is required for harsh environments. The TO-18 form factor provides superior thermal conductivity compared to plastic packages. Consider the 60 V collector-emitter voltage and 100 mA current limits to ensure adequate headroom for the intended circuit design requirements.

Single Bipolar Transistors Part Context

This part belongs to the MPS3415 series of NPN transistors offered by Central Semiconductor Corp. The series includes variants with different termination options and packaging styles. The MPS3415 is characterized by its robust construction and suitability for high-reliability applications where standard plastic packages may be insufficient.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include other NPN transistors in the TO-18 package with comparable voltage and current ratings. Verify pinout compatibility before substitution. Generic replacements must match the 60 V VCEO and 100 mA IC specifications.