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Product Detailed Parameters
- Description：RF TRANS NPN 12V 2GHZ TO-92
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：12V
- Frequency - Transition：2GHz
- Noise Figure (dB Typ @ f)：-
- Gain：-
- Power - Max：200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：25 @ 3mA, 1V
- Current - Collector (Ic) (Max)：50mA
- Operating Temperature：-
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 Long Body
- Supplier Device Package：TO-92 (TO-226)
- Grade：-
- Qualification：-
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Overview
The onsemi MPS5179 is an NPN silicon RF small-signal transistor designed for low-noise UHF/VHF amplifiers and high-output oscillators. It operates in common emitter or base modes with collector currents ranging from 100 µA to 30 mA. Key electrical parameters include a collector-emitter voltage (VCEO) of 12 V, a transition frequency (fT) of 900 MHz at 5 mA, and a noise figure of 5.0 dB at 200 MHz. The device supports a maximum continuous collector current of 50 mA and functions within a junction temperature range of -55°C to +150°C.
Feature Summary
- Optimized for low-noise performance in UHF and VHF amplifier applications
- Capable of high output power generation in low-frequency drift oscillators
- Designed for operation in both common emitter and common base configurations
Applications
- Low noise UHF/VHF amplifiers
- High output UHF oscillators
- RF signal processing circuits
Procurement Notes
Verify the specific package variant required, as the MPS5179 is available in TO-92 and SOT-23 formats. Confirm that the ordering suffix matches the desired packaging style, such as tape and reel or bulk, to ensure compatibility with assembly processes. Cross-reference the manufacturer's latest datasheet to validate pinout orientation and thermal resistance specifications before finalizing procurement.
Selection Notes
Select this component when designing circuits requiring low noise figures around 200 MHz and moderate gain. Ensure the operating collector current remains within the specified 100 µA to 30 mA range for optimal performance. Consider the thermal dissipation limits and junction temperature ratings if the application involves elevated ambient temperatures or high duty cycle operations.
Part Context
The MPS5179 is part of a family of NPN silicon high-frequency transistors, often cross-referenced with equivalents like the MMBT5179 and PN5179. Originally developed by Fairchild Semiconductor, these devices are widely used in RF front-end stages. The component serves as a standard solution for discrete amplifier designs where low noise and stable high-frequency characteristics are critical requirements.
Replacement Considerations
Equivalent parts include the MMBT5179 and PN5179. Verify pinout compatibility and package dimensions when substituting between TO-92 and SOT-23 variants.
