MPS5179_D75Z

Overview

The MPS5179_D75Z is an NPN silicon RF small signal transistor designed for low noise UHF/VHF amplifiers and high output UHF oscillators. It operates with collector currents between 100 µA and 30 mA in common emitter or common base configurations. Key electrical parameters include a collector-emitter voltage of 12 V, a collector-base breakdown voltage of 20 V, and a minimum DC current gain (hFE) of 25 at 3.0 mA. The device features a current gain-bandwidth product (fT) ranging from 900 MHz to 2000 MHz at 5.0 mA. Thermal characteristics specify a total power dissipation of 350 mW in TO-92 packaging and 225 mW in SOT-23 packaging.

Feature Summary

• Optimized for low noise performance in UHF and VHF amplifier applications
• Capable of functioning as a high output oscillator with low frequency drift
• Designed for operation in both common emitter and common base modes

Applications

• Low noise UHF/VHF amplifiers
• High output UHF oscillators
• RF front-end stages requiring minimal signal degradation

Procurement Notes

Verify the D75Z suffix indicates Tape and Reel Ammo packaging with the first wire off being the collector. Confirm the package type matches the required PCB footprint, typically TO-92 for this specific ordering code. Ensure the component source aligns with onsemi specifications rather than legacy Fairchild data sheets.

Selection Notes

Select this component when designing circuits requiring an NPN transistor with a collector-emitter voltage rating of 12 V and a bandwidth exceeding 900 MHz. Consider the thermal resistance limits if operating near maximum junction temperatures. Verify that the required collector current falls within the optimal range of 100 µA to 30 mA for intended noise figure performance.

Part Context

This part belongs to the MPS5179 family of NPN RF transistors. It shares functional similarities with the MMBT5179 and PN5179 variants, which utilize different packaging options such as SOT-23 or standard TO-92. The MPS5179 designation specifically refers to the through-hole compatible package style often used in general-purpose RF designs.

Replacement Considerations

Direct substitutes include the MMBT5179 and PN5179, provided the package form factor is adapted. Cross-reference datasheets from other manufacturers like Zetex or Samsung Semiconductor for equivalent NPN RF transistors, ensuring fT and VCEO ratings meet or exceed the original requirements.