MPS5179G

Overview

The MPS5179G is an NPN silicon high-frequency bipolar junction transistor manufactured by onsemi. It features a maximum collector-emitter voltage (VCEO) of 12 V and a continuous collector current rating of 100 mA. The device operates with a DC current gain (hFE) ranging from a minimum of 25 to a maximum of 160. Key electrical parameters include a transition frequency (fT) of 300 MHz, a collector-base breakdown voltage (VCBO) of 40 V, and an emitter-base breakdown voltage (VEBO) of 5 V. The component supports a maximum power dissipation of 200 mW and functions within a temperature range of -55 °C to +150 °C.

Feature Summary

• Engineered for ultra-high frequency signal processing applications
• Utilizes planar silicon construction for stable performance
• Designed for low-noise amplification in RF circuits

Applications

• RF amplifier stages in communication equipment
• High-frequency oscillator circuits
• General-purpose switching applications requiring fast response

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm package type and tape/reel specifications. Ensure that the procurement channel provides traceable data sheets matching the MPS5179G designation. Cross-reference the AEC-Q101 qualification status if automotive reliability standards are required for the final assembly.

Selection Notes

Select this component when circuit designs require an NPN transistor capable of operating at frequencies up to 300 MHz with moderate current handling. Compare the 12 V VCEO limit against peak signal voltages to prevent breakdown. Evaluate the thermal resistance characteristics relative to the PCB layout to ensure the 200 mW power dissipation limit is not exceeded during continuous operation.

Part Context

The MPS5179G belongs to the broader family of high-frequency silicon transistors produced by onsemi. It serves as a specialized discrete semiconductor solution for radio frequency environments. This part number represents a specific configuration within the manufacturer's portfolio of general-purpose and RF bipolar devices designed for compact electronic systems.

Replacement Considerations

Direct substitutes include the MPS5179STZ and MPS5179 variants from other manufacturers such as Zetex or Fairchild. Verify pinout compatibility and electrical parameter margins before substitution. Alternative components must match the NPN polarity and SC-59/SC-70 footprint requirements.