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MPS712 TIN/LEAD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is TH TRANSISTOR-SMALL SIGNAL (. Review the specifications below when checking this part for your BOM.
Single Bipolar Transistors specifications for MPS712 TIN/LEAD
- Description：TH TRANSISTOR-SMALL SIGNAL (<=1A
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Box
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Single Bipolar Transistors datasheet and documents for MPS712 TIN/LEAD
Single Bipolar Transistors Overview
The MPS712 TIN/LEAD is a silicon PNP Darlington transistor manufactured by Central Semiconductor using an epitaxial planar process. It is designed for small-signal applications requiring high current gain. The device features a collector-emitter voltage (Vceo) of 20V and an emitter-base voltage (Vebo) of 10V. It supports a continuous collector current of 500mA with a maximum power dissipation of 625mW. The component is housed in a through-hole package suitable for general-purpose amplification and switching tasks.
Single Bipolar Transistors Feature Summary
- Utilizes epitaxial planar silicon technology for robust performance
- Provides high current gain characteristic of Darlington configurations
- Designed for small-signal amplification and switching applications
Single Bipolar Transistors Applications
- Small-signal amplification circuits
- General-purpose switching applications
- Low-power signal processing systems
Single Bipolar Transistors Procurement Notes
Verify the specific ordering suffix to confirm lead-free compliance status, as standard variants may differ from the TIN/LEAD designation. Confirm that the required package type matches the through-hole specification. Ensure the application voltage and current requirements remain within the 20V Vceo and 500mA Ic limits defined in the official datasheet to prevent device failure.
Single Bipolar Transistors Selection Notes
Select this component when a PNP Darlington configuration is required for low-current amplification. The 500mA rating makes it suitable for driving moderate loads compared to standard small-signal transistors. Consider the 625mW power dissipation limit for thermal management in enclosed designs. Verify compatibility with the target circuit's voltage levels before integration.
Single Bipolar Transistors Part Context
This part belongs to the Central Semiconductor discrete semiconductor portfolio, which specializes in both standard and niche bipolar devices. The MPS series represents their range of Darlington transistors engineered for reliability. Central Semiconductor focuses on providing specialized components for various industrial and consumer electronics markets.
Single Bipolar Transistors Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Engineers should consult the manufacturer directly or review equivalent electrical specifications from other suppliers if cross-referencing is necessary.
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