MPSH10G

MPSH10G

  • Description:RF TRANS NPN 25V 650MHZ TO-92
  • Series:-

SKU:14aaa109ecb7 Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS NPN 25V 650MHZ TO-92
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):25V
  • Frequency - Transition:650MHz
  • Noise Figure (dB Typ @ f):-
  • Gain:-
  • Power - Max:350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 4mA, 10V
  • Current - Collector (Ic) (Max):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body
  • Supplier Device Package:TO-92 (TO-226)
  • Grade:-
  • Qualification:-

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MPSH10G

Overview

The MPSH10G is an NPN silicon radio frequency transistor manufactured by onsemi. It is designed for VHF and UHF applications, including oscillators and mixers in TV receiver tuners. The device features a TO-92-3 (TO-226-3) leaded package. Key electrical ratings include a collector-emitter voltage of 25V and a transition frequency of 650MHz. It supports surface mount or through-hole mounting styles depending on the specific variant configuration.

Feature Summary

  • Optimized for VHF and UHF oscillator and mixer circuits
  • NPN silicon construction for RF signal processing
  • Available in compact TO-92-3 leaded package

Applications

  • VHF oscillators
  • UHF oscillators
  • VHF mixers in TV receiver tuners

Procurement Notes

Verify the manufacturer origin carefully as listings attribute this part to both onsemi and STMicroelectronics. Confirm RoHS compliance status, as sources indicate conflicting information regarding lead-free certification. Ensure the package type matches the required TO-92-3 form factor before procurement.

Selection Notes

Select this component for high-frequency analog circuits requiring NPN switching or amplification at VHF/UHF bands. Compare the 650MHz transition frequency against circuit requirements. Verify the specific pinout and thermal characteristics for the TO-92-3 package implementation.

Part Context

This part belongs to the category of bipolar junction transistors (BJT) specifically engineered for radio frequency use. It serves as a discrete semiconductor solution for tuning and signal mixing stages in consumer electronics, particularly television reception hardware.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-reference with other VHF/UHF NPN RF transistors having similar 25V ratings and 650MHz fT specifications if direct substitution is required.

MPSH10GMPSH10G

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