MPSH17_D75Z

Overview

The MPSH17_D75Z is an NPN silicon epitaxial planar transistor manufactured by onsemi, designed for broadband applications. It features a collector-emitter breakdown voltage of 40 V and a continuous collector current rating of 200 mA. The device operates with a transition frequency of 300 MHz and supports a maximum power dissipation of 625 mW in a TO-92-3 package. It exhibits a DC current gain (hFE) of at least 100 when tested at 10 mA and 1 V. The component functions within a junction temperature range of -55°C to 150°C.

Feature Summary

• Optimized for broadband CATV amplifier and driver circuits
• High transition frequency suitable for RF signal processing
• Epitaxial planar silicon construction for reliability

Applications

• CATV amplifier stages
• Broadband signal drivers
• RF linear amplification

Procurement Notes

Verify the specific D75Z suffix against the manufacturer's official documentation to confirm packaging details, as suffixes can indicate variations in tape-and-reel specifications or environmental compliance. Confirm availability status directly with onsemi or authorized distributors, as discrete components may undergo lifecycle changes. Ensure the ordering information matches the required electrical characteristics for the intended design.

Selection Notes

Select this component for designs requiring high-frequency performance in small-signal applications. Compare the 300 MHz transition frequency against circuit bandwidth requirements. Evaluate the 625 mW power dissipation limit relative to thermal management constraints in the TO-92-3 package. Verify that the 40 V breakdown voltage exceeds the maximum expected operating voltage with adequate margin.

Part Context

The MPSH17 series belongs to onsemi's portfolio of small-signal bipolar junction transistors. These devices are engineered for high-frequency operation, distinguishing them from general-purpose switching transistors. The MPSH17 specifically targets communication infrastructure, providing stable gain and linearity for analog signal paths in video distribution networks.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Cross-reference with other NPN silicon epitaxial planar transistors offering similar 40 V ratings and >300 MHz transition frequencies if direct substitution is required.