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The MPSH17RLRA is a PNP silicon epitaxial planar transistor manufactured by onsemi, designed for high-frequency applications. It features a collector-emitter voltage (VCEO) of 30 V and an emitter-base voltage (VEBO) of 5 V. The device supports a maximum DC collector current of 200 mA with a power dissipation rating of 625 mW. Operating within a temperature range of -55°C to +150°C, it utilizes a TO-92-3 (TO-226AA) through-hole package. The component exhibits a transition frequency (fT) of 400 MHz at IC=10mA, VCE=5V, making it suitable for broadband amplifier circuits.
Verify the specific RLRA suffix against the official onsemi datasheet to confirm packaging details and tape-and-reel specifications. Confirm RoHS compliance status directly from the manufacturer's latest documentation, as regulatory updates may affect material declarations. Ensure the component source is authorized to avoid counterfeit risks given the component's age.
Select this component when a PNP transistor with a 400 MHz transition frequency is required for video or RF applications. Compare the 200 mA current limit and 625 mW power dissipation against circuit requirements. Verify that the TO-92-3 package fits the PCB layout constraints and that the 30 V voltage rating exceeds the peak operating voltages in the design.
The MPSH17 series belongs to onsemi's portfolio of high-frequency discrete transistors historically used in cable television infrastructure. The RLRA variant typically denotes a specific reel packaging format. This part represents legacy technology often found in existing analog video distribution equipment and broadband amplifier designs requiring reliable PNP switching or amplification characteristics.
Consult the official onsemi cross-reference guide for verified substitutes. Potential equivalents include other high-frequency PNP transistors with similar fT ratings, such as those from NTE Electronics or Toshiba, provided pinouts and electrical limits match exactly.