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The MQ2N4860UB/TR is a single N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes Silicon technology and is designed for surface mount installation in an SMD-3 package. The device features a drain-source breakdown voltage of 30 V and a gate-source breakdown voltage of -30 V. Key electrical characteristics include a continuous drain current of 175 mA, a typical on-state resistance of 25 Ohms, and a maximum power dissipation of 1.8 W. It operates within a temperature range from -65°C to +200°C.
Verify the specific datasheet revision and ordering suffixes when sourcing components. Confirm that the received parts match the exact part number designation to ensure compatibility with design specifications. Check manufacturer documentation for any updates regarding environmental compliance or material declarations prior to integration into final products.
Select this component for designs requiring high-temperature operation and low noise performance in RF applications. Consider the 30 V breakdown limits and 1.8 W power dissipation capabilities when designing thermal management solutions. Ensure the SMD-3 package footprint aligns with the PCB layout constraints and soldering profiles required for reliable surface mount assembly.
This component belongs to the Microchip Technology JFET product line, specifically engineered for analog and RF applications. It serves as a discrete semiconductor solution offering stable performance across wide temperature ranges. The series supports various circuit topologies requiring high input impedance and linear operation characteristics.
Consult official substitution guides for equivalent N-channel JFETs with matching voltage and current ratings. Verify pinout compatibility and thermal characteristics before replacing the original component in existing designs.