MQ2N4860UB

Overview

The MQ2N4860UB is an N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It features a maximum drain-source voltage of 30 V and a power dissipation rating of 360 mW. The device has an on-resistance of 40 Ohms and a cutoff voltage of 2 V at 500 pA. This component is available in the UB surface-mount package configuration.

Feature Summary

• N-channel JFET technology
• Surface-mount UB package
• 30 V breakdown voltage

Applications

• Low-noise amplifier circuits
• Analog switching applications
• High-impedance input stages

Procurement Notes

Verify current availability status as this part may be discontinued or subject to long lead times. Confirm RoHS compliance requirements prior to ordering, as specific documentation indicates non-compliance for certain variants. Ensure the UB package type matches the target PCB footprint design constraints.

Selection Notes

Select this component for applications requiring low noise performance and high input impedance. The 30 V rating suits moderate voltage environments. Consider the 40 Ohm on-resistance for signal path losses. Verify thermal management capabilities given the 360 mW dissipation limit in the small surface-mount package.

Part Context

This JFET belongs to Microchip's discrete transistor lineup, designed for analog signal processing. It complements other N-channel devices in the series, offering consistent electrical characteristics for balanced circuit designs. The UB package facilitates automated assembly processes.

Replacement Considerations

Check for alternative JFETs with matching 30 V ratings and similar pinout configurations. Verify that substitute components meet the 360 mW power dissipation requirement. Ensure the replacement maintains comparable noise figures if used in sensitive amplifier stages.