MQ2N4861UB

Overview

The MQ2N4861UB is a single N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology using silicon technology. It is designed for surface-mount installation in an SMD-3 package. The device features a drain-source breakdown voltage of 30 V and a gate-source breakdown voltage of -30 V. At zero gate-source voltage, the drain current reaches 80 mA, with a maximum on-resistance of 60 Ohms. It supports a power dissipation of 1.8 W and operates within a temperature range from -65°C to +200°C.

Feature Summary

• Utilizes silicon JFET technology for robust performance
• Supports high-temperature operation up to 200°C
• Designed for surface-mount applications

Applications

• High-temperature electronic circuits
• Analog signal processing
• Low-noise amplification stages

Procurement Notes

Verify the specific ordering suffix and package variant against the official Microchip datasheet before procurement. Confirm that the component meets all required environmental and electrical specifications for the intended application. Ensure compatibility with existing design constraints and supply chain requirements.

Selection Notes

Select this component when a single N-channel JFET with high thermal tolerance is required. Consider its 30 V breakdown limits and 1.8 W power dissipation capabilities. Evaluate the SMD-3 package suitability for the target PCB layout and assembly process.

Part Context

This part belongs to the Microchip JFET product line, categorized under transistors. It is distinct from other JFET models like the MQ2N4859UB/TR due to specific parameter differences such as drain current and on-resistance values.

Replacement Considerations

Consult official substitution guides for verified alternatives. Cross-reference parameters carefully to ensure functional equivalence.