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Product Detailed Parameters
- Description：JFET P-CH 30V UB
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- FET Type：P-Channel
- Voltage - Breakdown (V(BR)GSS)：30 V
- Drain to Source Voltage (Vdss)：30 V
- Current - Drain (Idss) @ Vds (Vgs=0)：30 mA @ 18 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：5 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds：25pF @ 15V
- Resistance - RDS(On)：75 Ohms
- Power - Max：500 mW
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：3-SMD, No Lead
- Supplier Device Package：UB
- Grade：Military
- Qualification：MIL-PRF-19500
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Overview
The MQ2N5114UB is a P-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes silicon technology and is housed in an SMD/SMT UB-4 package. Key electrical specifications include a drain-source breakdown voltage of 30 V, a gate-source breakdown voltage of 30 V, and a gate-source cutoff voltage of 4 V. The device supports a maximum power dissipation of 500 mW and operates within a temperature range from -65°C to +200°C.
Feature Summary
- Surface mount equivalent to JEDEC registered 2N5114 series
- Low-profile ceramic surface mount package
- Screening in reference to MIL-PRF-19500 available
Applications
- High-reliability applications requiring military screening
- Voltage regulation circuits
- Small signal amplification
Procurement Notes
Verify the specific suffix 'MQ' indicates military-grade screening per MIL-PRF-19500 standards when ordering. Confirm that the UB-4 package dimensions match the target PCB footprint. Ensure the procurement channel provides documentation for the environmental compliance status, as RoHS compliance is noted for commercial grades only.
Selection Notes
Select this component for designs requiring a P-channel JFET with high-temperature capability up to 200°C. The UB-4 package is suitable for space-constrained surface mount layouts. Compare the 30 V breakdown voltage against circuit requirements to ensure adequate margin. Consider the 500 mW power dissipation limit for thermal management planning in the final assembly.
Part Context
This part belongs to the 2N5114 through 2N5116 series of small-signal field-effect transistors. The series offers low-profile ceramic packages designed for robust performance. Microchip Technology produces these devices to serve both commercial and high-reliability markets, providing surface mount options that correspond to traditional leaded equivalents.
FAQ
Is the MQ2N5114UB RoHS compliant?
RoHS compliant versions are available for commercial grade products only. Military screening variants may have different compliance statuses.
What is the maximum operating temperature?
The maximum operating temperature for this device is +200°C.
