SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The MQ2N5116 is a silicon P-Channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It is housed in a TO-18-3 metal can package designed for through-hole mounting. The device features a drain-source breakdown voltage of 30 V and a gate-source breakdown voltage of 30 V. It operates with a gate-source cutoff voltage of 6 V and provides a zero-gate-voltage drain current of 7 mA. The component has a maximum power dissipation of 500 mW and an on-resistance of 100 Ohms. It supports an operating temperature range from -65°C to +200°C.
Verify the specific ordering suffix against official Microchip documentation to ensure correct binning and electrical characteristics. Confirm that the TO-18-3 package dimensions match the target PCB layout requirements. Check for RoHS compliance status as indicated in the latest datasheet revision, noting that military-grade variants may have different environmental specifications than commercial equivalents.
Select this component when a P-Channel JFET with high thermal stability is required. The TO-18-3 package is suitable for applications where hermetic sealing is necessary. Ensure the circuit design accommodates the 7 mA typical drain current and 30 V voltage ratings. Consider the 100 Ohm on-resistance for impedance matching purposes in analog signal paths.
The MQ2N5116 belongs to the 2N5116 series of JFETs produced by Microchip Technology. This series is known for its reliability in demanding electronic environments. The part is categorized under transistors and specifically falls within the JFET product line. It shares similar physical packaging with other devices in the family but maintains distinct electrical parameters defined by its specific model designation.
Publicly confirmed substitute part numbers are not available in the provided reference material. Verify compatibility with generic 2N5116 equivalents only if their datasheets confirm identical pinouts and electrical limits.